Surface cleaning method of semiconductor wafer heat treatment boat

a technology of heat treatment boat and surface cleaning method, which is applied in the direction of surface treatment composition, decorative arts, chemistry apparatus and processes, etc., can solve the problems of low yield of semiconductor devices formed later on the wafer, metallic contamination of the wafer, and metallic contamination to diffuse outwardly, so as to prevent metallic contamination reduce the production time and manufacturing costs of the semiconductor wafer, and efficiently and easily remove metallic contamination

Inactive Publication Date: 2008-10-02
COVALENT MATERIALS CORP
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Benefits of technology

[0012]According to an embodiment of the present invention, metallic contamination to semiconductor wafers is prevented by efficiently and easily removing metallic contamination in an oxide film on the S...

Problems solved by technology

Such a reaction product is unpreferred because it degrades surface smoothness of the wafer and leads to a lower yield of semiconductor devices formed later on the wafer.
However, though reaction products are suppressed, formation of the oxide film has created a new problem that metallic impurities such as Fe supplied by, for example, a source gas of oxidization are in...

Method used

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  • Surface cleaning method of semiconductor wafer heat treatment boat
  • Surface cleaning method of semiconductor wafer heat treatment boat
  • Surface cleaning method of semiconductor wafer heat treatment boat

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example

[0038]Examples of the present invention will be described below, but the present invention is not limited to these examples.

[0039]A semiconductor wafer heat treatment boat for semiconductor wafers of 300 mm in diameter formed from Si-impregnated SiC base material with CVD-SiC deposited on the surface thereof was dry-oxidized at 1200° C. for one hour. An oxide film of about 270 nm was formed on the boat surface by the oxidation. The boat was soaked in a 0.5% HF solution for 2 min to remove the oxide film of up to about 10 nm depth from the surface of the oxide film by etching.

[0040]50 silicon wafers were loaded on the boat that underwent the above surface cleaning treatment to heat-treat the silicon wafers in an argon gas atmosphere at 1200° C. for one hour. After the heat treatment, the average Fe concentration of three silicon wafers at the wafer support position by the boat was measured by the SPV (Surface Photo Voltage) method. FIG. 5 shows a measurement result.

[0041]The conditio...

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Abstract

A surface cleaning method of a semiconductor wafer heat treatment boat that can prevent metallic contamination to semiconductor wafers and keep down a production time and manufacturing costs of semiconductor wafers by efficiently and easily removing metallic impurities in an oxide film on an SiC boat surface is provided. A surface cleaning method of a semiconductor wafer heat treatment boat according to an embodiment of the present invention is a surface cleaning method of a semiconductor wafer heat treatment boat whose surface is formed of SiC, includes oxidizing the surface of the heat treatment boat by thermal oxidation and etching a portion of the oxide film formed after oxidation is removed.

Description

CROSS-REFERENCE TO RELATED APPLICATION[0001]This application is based upon and claims the benefit of priority from Japanese Patent Application No. 2006-262305, filed on Sep. 27, 2006, the entire contents of which are incorporated herein by reference.FIELD OF THE INVENTION[0002]The present invention relates to a surface cleaning method of a semiconductor wafer heat treatment boat, and in particular, relates to a surface cleaning method of a semiconductor wafer heat treatment boat whose surface is made of SiC.BACKGROUND OF THE INVENTION[0003]Semiconductor devices such as LSI are formed on the surface of a semiconductor wafer (hereinafter simply called a “wafer”). In a manufacturing process of the semiconductor wafer, a process of heat-treating the wafer at a high temperature is performed in order to form an oxide film on the wafer surface or diffuse impurities.[0004]In such a process of providing heat treatment, a component for holding the wafer during heat treatment, a so-called semi...

Claims

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Application Information

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IPC IPC(8): C23F1/00
CPCC09K13/08C23F1/28
Inventor AOKI, TATSUHIKOSEI, MOTOHIROARAKI, KOJI
Owner COVALENT MATERIALS CORP
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