Structure of a structure release and a method for manufacturing the same

Abstract

A structure of a structure release and a manufacturing method are provided. The structure and manufacturing method are adapted for an interference display cell. The structure of the interference display cell includes a first electrode, a second electrode and at least one supporter. The second electrode has at least one hole and is arranged about parallel with the first electrode. The supporter is located between the first electrode and the second electrode and a cavity is formed. In the release etch process of manufacturing the structure, an etchant can pass through the hole to etch a sacrificial layer between the first and the second electrodes to form the cavity; therefore, the time needed for the process becomes shorter.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS [0001] This application is a continuation-in-part, and hereby incorporates by reference the entire disclosure, of U.S. patent application Ser. No. 10 / 644,312, filed Aug. 19, 2003. [0002] Moreover, this application incorporates by reference U.S. patent application Ser. No. 11 / 090,911, filed Mar. 25, 2005; U.S. patent application Ser. No. 11 / 150,496, filed Jun. 10, 2005; U.S. Pat. No. 5,835,255, issued Nov. 10, 1998; U.S. Pat. No. 5,986,796, issued Nov. 16, 1999; U.S. Pat. No. 6,040,937, issued Mar. 21, 2000; U.S. Pat. No. 6,055,090, issued Apr. 25, 2000; U.S. Pat. No. 6,650,455, issued Nov. 18, 2003; U.S. Pat. No. 6,674,562, issued Jan. 6, 2004; U.S. Pat. No. 6,741,377, issued May 25, 2004; and U.S. Pat. No. 6,870,654, issued Mar. 22, 2005.BACKGROUND OF THE INVENTION [0003] 1. Field of the Invention [0004] The present invention relates to a structure of a structure release and a method for manufacturing the same, and more particularly, the pres...

AI Technical Summary

Benefits of technology

[0018] The development of the etching apparatus with an etchant of xenon difluoride is not maturing, which is disadvantageous to the development and throughput of the optical interference display, and the etchant xenon difluoride is expensive and unstable. Therefore, if etching process apparatuses used in semiconductor or typical planar display can be applied to perform a structure release etching process, the process apparatuses of the optical interference display are easily reorganized and consolidated, and the structure release etching process can be performed cheaply.

Problems solved by technology

The development of the etching apparatus with an etchant of xenon difluoride is not maturing, which is disadvantageous to the development and throughput of the optical interference display, and the etchant xenon difluoride is expensive and unstable.

The reason that the etching apparatus used in typical semiconductor or planar display is not suitable for use in the structure release etching process is the poor capacity for lateral etching, and even though an etchant with a great etching property, for example, nitrogen trifluoride (NF3) or sulphur hexafluoride (SF6), is used, the etching rate is only between 3 micrometers and 10 micrometers per minute.

This is slower than that for using xenon difluoride as an etchant by several to dozens of times. Therefore, this is very disadvantageous to throughput of the optical interference display.

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