Chemical mechanical polish with multi-zone abrasive-containing matrix

Abstract

Chemical mechanical polish (CMP) devices, CMP systems, methods of CMP, and methods of manufacturing CMP devices. A CMP device comprises a plurality of zones, with each zone having a matrix of fixed abrasive features disposed therein. The abrasive-containing matrix within each zone has material removal properties that differ from the material removal properties of the abrasive-containing matrixes of the other zones. The material removal property differences of the abrasive-containing matrixes of the zones may achieved by using different abrasive materials, densities, heights, or shapes, or combinations thereof, of the fixed abrasive features within the zones, or by using physical or chemical conditioning. When the novel CMP device is used to planarize a semiconductor wafer, a substantially planar surface with an improved CMP profile results.

Description

TECHNICAL FIELD [0001] The present invention relates generally to manufacturing processes for semiconductor devices, and more particularly to chemical mechanical polish (CMP) processes. BACKGROUND [0002] Semiconductor devices are manufactured by depositing many different types of material layers over a semiconductor workpiece or wafer, and patterning the various material layers using lithography. The material layers typically comprise thin films of conductive, semiconductive and insulating materials that are patterned to form integrated circuits (IC's). In many integrated circuit designs, the various material layers are planarized before depositing subsequent material layers. [0003] There may be a plurality of transistors, memory devices, switches, conductive lines, diodes, capacitors, logic circuits, and other electronic components formed on a single semiconductor die or chip. Semiconductor technology has experienced a trend towards miniaturization, to meet the demands of product s...

AI Technical Summary

Benefits of technology

[0017] Advantages of embodiments of the present invention include providing a CMP pad or web having zones with non-uniform fixed abrasive features formed thereon that can produce a mo

Problems solved by technology

However, these techniques provide only a limited degree of smoothing and local planarization.

One problem with CMP is the non-uniformity of film thickness across a wafer.

However, there are disadvantages of using such a multi-zone pressure head for CMP.

Such a CMP system is complex, and there is a limitation for its use on certain profiles.

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