Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements
a technology of magnetic elements and ballistic magnetoresistance, which is applied in the field of magnetic memory systems, can solve the problems of high signal output, power consumption, and the probability of nearby cells being inadvertently switched, and achieve the effect of high signal outpu
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[0028] The present invention relates to an improvement in magnetic elements and magnetic memories, such as MRAM. The following description is presented to enable one of ordinary skill in the art to make and use the invention and is provided in the context of a patent application and its requirements. Various modifications to the preferred embodiment will be readily apparent to those skilled in the art and the generic principles herein may be applied to other embodiments. Thus, the present invention is not intended to be limited to the embodiment shown, but is to be accorded the widest scope consistent with the principles and features described herein.
[0029] The present invention provides a method and system for providing a magnetic element. The method and system comprise providing a pinned layer, a magnetic current confined layer, and a free layer. The pinned layer is ferromagnetic and has a first pinned layer magnetization. The magnetic current confined layer has at least one chan...
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