Planar substrate with selected semiconductor crystal orientations formed by localized amorphization and recrystallization of stacked template layers
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[0035] The present invention, which provides planar hybrid-orientation SOI substrate structures and methods of fabricating the same, will now be described in greater detail by referring to the drawings that accompany the present application.
[0036]FIGS. 5A-5B show, in cross section view, two preferred embodiments of hybrid-orientation substrates that can be fabricated by the methods of the present invention. Hybrid-orientation substrate 450 of FIG. 5A and hybrid-orientation substrate 460 of FIG. 5B both comprise first single crystal semiconductor regions 470 with a first orientation, and second single crystal semiconductor regions 480 with a second orientation different from the first orientation. Semiconductor regions 470 and 480 have approximately the same thickness and are disposed on the same BOX layer 490. The term “BOX” denotes a buried oxide region. Although this terminology is specifically used here, the present invention is not limited to merely buried oxides. Instead, vari...
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