Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Nano porous zinc oxide thin film with high C-axis orientation and preparation method thereof

A zinc oxide thin film, nanoporous technology, applied in the direction of zinc oxide/zinc hydroxide, etc., can solve the problems such as precedents in the field of useless thin film synthesis, and achieve the effect of no high-temperature heat treatment equipment, large roughness, and small grain size

Inactive Publication Date: 2007-03-07
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

SILAR thin film growth technology was first proposed by Y.F.Nicolau in 1985, and in recent years in sulfides (ZnS, PbS, CuS, NiS, Ag 2 S), selenide film (Bi 2 Se 3 ), multilayer films (CdS / ZnS), epitaxial films (ZnS / (111)InP and ZnS / (001)GaAs) are widely used in deposition, but insurmountable difficulties are encountered in the preparation of oxide films , there are relatively few reports on the deposition of oxide films and ZnO films by the SILAR method
[0004] Ultrasonic irradiation is an emerging edge technology that intervenes in chemical reactions under the extreme temperature and pressure conditions of ultrasonic cavitation (instantaneous temperature up to 5000K, pressure about 180MPa), and has been increasingly used in nanomaterials (such as nanowires) in recent years. , rods, nanoparticles), but there is no precedent for thin film synthesis

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Nano porous zinc oxide thin film with high C-axis orientation and preparation method thereof
  • Nano porous zinc oxide thin film with high C-axis orientation and preparation method thereof
  • Nano porous zinc oxide thin film with high C-axis orientation and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] 1. Preparation of zinc-ammonia ion precursor. 0.1 mol / l zinc sulfate is dissolved in deionized water to form a solution, and concentrated ammonia water (25-28%) is slowly added dropwise thereto to obtain a stable zinc-ammonium complex ion precursor solution. The molar concentration ratio of zinc ions to ammonia water is 1:10.

[0026] 2. Use ordinary slide glass as the substrate. Firstly, soak it with hot dilute sulfuric acid (about 60°C), and then fully rinse it with acetone, ethanol and deionized water respectively; after treatment, put it in a vacuum dryer for later use.

[0027] 3. Film growth. Divided into the following four steps:

[0028] a) Place the substrate in the precursor solution and perform [ZN(NH 3 )] 4 2+ Adsorption, duration 15 seconds;

[0029] b) The adsorbed [ZN(NH 3 )] 4 2+ The substrate was transferred to deionized water and allowed to stand for 20 seconds;

[0030] c) ultrasonically irradiating the substrate in another deionized aqueou...

Embodiment 2

[0035] 1. Preparation of zinc-ammonia ion precursor. 0.1 mol / l zinc acetate is dissolved in deionized water to form a solution, and concentrated ammonia water is slowly added dropwise thereto to obtain a stable zinc-ammonium ion precursor solution. The molar concentration ratio of zinc ions to ammonia water is 0.2.

[0036] 2. Use ITO conductive glass as the substrate. First rinse it with hot dilute hydrochloric acid (about 60°C) for a short time (about 10 seconds to 60 seconds), then fully rinse it with acetone, ethanol and deionized water respectively; after treatment, put it in a vacuum dryer for later use.

[0037] 3. Film growth. Divided into the following four steps:

[0038] a) Place the substrate in the precursor solution and perform [ZN(NH 3 )] 4 2+ Adsorption, duration 15 seconds;

[0039] b) The adsorbed [ZN(NH 3 )]4 2+ The substrate was transferred to deionized water and allowed to stand for 30 seconds;

[0040] c) ultrasonically irradiating the substrate...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
particle sizeaaaaaaaaaa
sizeaaaaaaaaaa
sizeaaaaaaaaaa
Login to View More

Abstract

The invention discloses a nanometer porous zinc oxide film and preparing method with high c-axle orientation in the semiconductor photoelectric material, nanometer energy material and catalyzing material domain, which comprises the following steps: (1) adsorbing former solution (allocating solution with metal zinc and ammonia or other materials); (2) stewing substrate (common glass, quartz glass, ITO conductive glass or other materials); (3) irradiating substrate through ultrasound; (4) reacting through hot water; drying substrate.

Description

technical field [0001] The invention relates to a nanoporous zinc oxide film with high c-axis orientation, which can be applied to visible-ultraviolet band light emission, photocatalysis, reaction catalysis, gas sensing, battery porous electrode, and dye-sensitized solar cell photoanode and its Preparation. It belongs to the fields of semiconductor optoelectronic materials, nano energy materials and catalytic materials. Background technique [0002] ZnO is a very important II-VI compound semiconductor material. Its forbidden band width is 3.37eV and its exciton binding energy is as high as 60meV. Such as ultraviolet light-emitting diodes, ultraviolet semiconductor lasers) and other fields have been widely used; at the same time, ZnO also has piezoelectric, gas-sensitive, photosensitive and other characteristics, in piezoelectric transducers, surface acoustic wave devices (SAW), semiconductor gas sensors, ultraviolet Photodetectors, photocatalysis, and solar photoelectric c...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C01G9/02
Inventor 高相东李效民于伟东
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com