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Method of manufacturing compound single crystal and apparatus for manufacturing it

A single crystal manufacturing device and manufacturing method technology, applied in chemical instruments and methods, single crystal growth, single crystal growth, etc., can solve the problems of growth rate reduction, uneven crystal nuclei, etc.

Active Publication Date: 2007-02-28
PANASONIC CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, for example, in the current liquid phase growth method of a nitride semiconductor single crystal using an alkali metal such as Na or an alkaline earth metal as a flux, since a raw material gas such as nitrogen is pressurized to dissolve it in the raw material liquid, It is easy to generate uneven crystal nuclei at the gas-liquid interface
If crystal nuclei are generated at the gas-liquid interface, crystal growth is inhibited on the seed crystal that was intended to grow, resulting in a decrease in the growth rate

Method used

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  • Method of manufacturing compound single crystal and apparatus for manufacturing it
  • Method of manufacturing compound single crystal and apparatus for manufacturing it
  • Method of manufacturing compound single crystal and apparatus for manufacturing it

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0112] This aspect is an example in which the airtight pressure-resistant and heat-resistant container can be disconnected from the connecting pipe, and the above-mentioned airtight pressure-resistant and heat-resistant container can also be shaken by the shaking heating device. Hereinafter, an example of the manufacturing apparatus of this aspect and an example of the manufacturing method using it are demonstrated.

[0113] The above-mentioned manufacturing apparatus has a raw material gas supply device for supplying raw material gas, a pressure regulator for adjusting the pressure of the culture atmosphere, a sealed pressure-resistant and heat-resistant container for crystal growth, a heating device, and a shaking heating device as a whole. device. As the source gas, a gas containing nitrogen or ammonia can be used. As the airtight pressure-resistant and heat-resistant container, for example, SUS materials such as SUS316, Inconel, Hastelloy, or Inkoroy can be used. Certain...

Embodiment approach 2

[0138] This aspect is an example in which the airtight pressure-resistant and heat-resistant container can be disconnected from the connecting pipe, and only the above-mentioned airtight pressure-resistant and heat-resistant container can be shaken. Hereinafter, an example of the manufacturing apparatus of this aspect and an example of the manufacturing method using it are demonstrated.

[0139] The above-mentioned manufacturing apparatus has a raw material gas supply device for supplying raw material gas, a pressure regulator for adjusting the pressure of the culture atmosphere, a sealed pressure-resistant and heat-resistant container for crystal culture, a heating device (cultivation furnace), and a shaker for shaking. The rotating mechanism of the airtight pressure-resistant and heat-resistant container. The above-mentioned airtight pressure-resistant and heat-resistant container is rotated by the above-mentioned rotating mechanism. When the crucible is inserted and fixed ...

Embodiment approach 3

[0146] This embodiment is an example in which a raw material gas supply device is connected to an airtight pressure-resistant and heat-resistant container using a flexible tube, and the container is shaken without disconnecting the raw material gas supply device and the container. Hereinafter, an example of the manufacturing apparatus of this aspect and an example of the manufacturing method using it are demonstrated.

[0147] The above production apparatus has a raw material gas supply device for supplying raw material gas, a pressure regulator for adjusting the pressure of the culture atmosphere, a sealed pressure-resistant and heat-resistant container for crystal growth, a flexible tube, and a heating device (cultivation furnace). A shaking device integrated with a shaking heating device (cultivation furnace). Since the above-mentioned raw material gas supply device and the above-mentioned airtight pressure-resistant and heat-resistant container are connected by a flexible ...

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Abstract

A method for producing a compound single crystal involving reacting a gaseous raw material and a liquid raw material, wherein the compound single crystal is grown with agitation of the liquid raw material in such a manner that a flow is formed in the liquid raw material, from the gas-liquid interface, at which the gas and the liquid contact with each other, to the inside of the liquid raw material; and an apparatus for use in the method. The above agitation allows the easy dissolution of the gaseous raw material into the liquid raw material and the achievement of a supersaturation state in a short time, resulting in the improvement in the grow rate of the compound single crystal, and further allows more uniform dissolution of the gaseous raw material through the formation of the flow from the gas-liquid interface having a high content of the gaseous raw material to the inside of the liquid raw material having a low content of the gaseous raw material, resulting in the inhibition of non-uniform generation of nuclei in the gas-liquid interface, which in turn leads to the improvement in quality of the resultant compound single crystal.

Description

technical field [0001] The present invention relates to a method for producing a compound single crystal and a production device used in the production method. In particular, it relates to a method for producing a group III nitride single crystal such as gallium nitride and aluminum nitride, and a production device used in the production method. Background technique [0002] Group III nitride compound semiconductors such as gallium nitride (GaN) (hereinafter sometimes referred to as Group III nitride semiconductors or GaN-based semiconductors) are attracting attention as materials for semiconductor elements emitting blue and ultraviolet light. Blue laser diodes (LDs) are used in high-density optical discs, displays, and the like, and blue light emitting diodes (LEDs) are used in displays, lighting, and the like. In addition, ultraviolet LDs are expected to be applied to biotechnology and the like, and ultraviolet LEDs are expected to be used as ultraviolet light sources of ...

Claims

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Application Information

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IPC IPC(8): C30B19/02C30B29/38C30B11/06C30B29/40
CPCC30B9/10C30B19/064C30B19/02C30B29/406C30B19/063Y10T117/1016
Inventor 森勇介北冈康夫峯本尚木户口勲高桥康仁佐佐木孝友川村史朗
Owner PANASONIC CORP
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