Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Integrated circuit with self-correcting function, measuring apparatus therefor and parameter self-recording method

A technology of integrated circuit and burning method, which is applied in the direction of measuring device, special recording/indicating device, conversion sensor output, etc., can solve the problems of increasing the manufacturing cost of the measuring system, and achieve saving energy consumption, reducing production cost, and correcting procedures simplified effect

Inactive Publication Date: 2006-12-27
FUXIANG MICROELECTRONICS SHENZHEN
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This method of storing standard parameters in an external memory, although the EEPROM 105 is easier to access, will increase the manufacturing cost of the entire measurement system

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Integrated circuit with self-correcting function, measuring apparatus therefor and parameter self-recording method
  • Integrated circuit with self-correcting function, measuring apparatus therefor and parameter self-recording method
  • Integrated circuit with self-correcting function, measuring apparatus therefor and parameter self-recording method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] Embodiment 1: Please refer to Fig. 2, which is a circuit structure diagram showing a measurement device with a built-in one-time programmable memory according to a specific embodiment of the present invention, including an integrated circuit 200, an external sensor 201 and a display 215, and the input of the sensor 201 The measurement signal is sent to the integrated circuit 200 , and the integrated circuit 200 outputs the actual analog quantity of the object to be measured to the display 215 . In the calibration procedure, the sensor 201 contacts the standard measuring object, and outputs a standard signal to the analog-to-digital converter 203 of the integrated circuit 200. The standard signal is an analog signal, which is converted into a digital standard signal by the analog-to-digital converter 203 and input to the microprocessor The device 209 obtains the standard parameters after calculation by the microprocessor 209, and the microprocessor 209 directly stores the...

Embodiment 2

[0040] Example 2: Please refer to Figure 4 As shown, in this example, a charge pump is added to the integrated circuit to directly boost the voltage of the system power supply for writing standard parameters in the self-calibration mode. In the self-calibration mode, when the calibration instruction performs standard parameter programming on the parameter memory area of ​​the programmable memory, the microprocessor sends an enable signal to start the charge pump 216, and selects the conduction charge pump through a switch circuit 217 The output voltage is provided to a programmable memory until the programming of standard parameters is completed. For example: if the integrated circuit power supply is 3 volts, it will generate a voltage of 6 volts by itself after being boosted by the charge pump. In this way, the final system product does not need to be connected with an additional VDD voltage of 5.8 volts, and the external voltage source can be reduced when programming the c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to an integrated circuit, and relative measure device, and a parameter self record method of said integrated circuit, wherein said integrated circuit comprises a micro processor, one-time programmable memory with at least one instruction group memory region, and one parameter memory region for storing correct standard parameter; said micro processor based on the standard parameter of one-time programmable memory calculates out the real measured value relative to the digit signal. The inventive integrated circuit can avoid additional external memory device, to reduce the cost. And the invention has self record correct parameter, to process self-correction after completing the final product, to reduce the cost.

Description

【Technical field】 [0001] The invention relates to an integrated circuit as a measurement application field, a device using the integrated circuit and a parameter burning method therein. 【Background technique】 [0002] At present, the known integrated circuit structure is composed of sensors for signals to be measured such as pressure and weight, an analog-to-digital converter (ADC), an MCU, and a calibration coefficient storage. The MCU includes program memory, data memory, and central computing unit. [0003] When measuring, the sensor is in contact with the signal to be measured, and the sensor converts the physical quantity of the signal to be measured into an electrical signal (voltage or current), which is converted into a digital signal by an analog-to-digital converter, and is calculated by the MCU. processed or further transformed and displayed on the display. However, the source of the MCU's calculation, processing or further conversion comes from the instructions...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G01D3/02G01D3/10G01D5/00
Inventor 赵伯寅林祥民袁国元
Owner FUXIANG MICROELECTRONICS SHENZHEN
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products