LED with electric conductive layer of metal oxide

Abstract

A light emitting diode having a metal oxide conducting layer comprises: a transparent baseboard; a semiconductor stack layer formed on said transparent layer; and an n-type gallium nitride semiconductor layer and a p-type gallium nitride semiconductor layer formed on said semiconductor stack layer. Said semiconductor stack layer has an exposed n-electrode metal pad and an exposed p-type metal pad separately coupled to said n-type gallium nitride layer and said P-type gallium nitride layer. A metal oxide conducting layer is formed between said p-type gallium nitride semiconductor layer and said p-electrode pad. After the growth of p-type gallium nitride semiconductor layer is implemented, the temperature in reactor is reduced from 900DEG C to 400DEG C, while the nitride is passed through to active the surface of chip in order to form a good electrical contact between said p-type gallium nitride semiconductor layer and said metal oxide conducting layer.

Description

technical field [0001] The invention relates to a light-emitting diode with a metal oxide conductive layer, especially a light-emitting diode that is activated in a reactor during the epitaxial growth process to form a good conductive contact between the p-type semiconductor layer and the metal oxide conductive layer, which can greatly improve production. Excellent rate and device reliability, and at the same time achieve a light-emitting diode with a metal oxide conductive layer that simplifies the manufacturing process. Background technique [0002] In order to increase the diffusion of current, several layers of thin metal structures are vapor-deposited on the p-type semiconductor layer, for example, using double-layer structures such as nickel / gold (Ni / Au) or cobalt / gold (Co / Au) as transparent electrodes, and matching The way of heat treatment makes the thin metal structure into a transparent conductive layer, thereby achieving the effect of light penetration, but the li...

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Problems solved by technology

[0002] In order to increase the diffusion of current, several layers of thin metal structures are vapor-deposited on the p-type semiconductor layer, for example, using double-layer structures such as nickel / gold (Ni / Au) or cobalt / gold (Co / Au) as transparent electrodes, and matching The way of heat treatment makes the thin metal structure into a transparent conductive layer, thereby achieving the effect of light penetration, but the light transmittance of this kind of light-emitting diode (GaN LED) is still limited. The efficiency can only reach about 40-70%, thus affecting the luminous efficiency of gallium nitride light-emitting diodes

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