Production of semiconductor component and method for adjusting component channel area lattice distance

Abstract

The method comprises: forming several grid structures on the substrate; forming a corresponding source region and a drain region on the portion of substrate aside each grid structure; forming a self-alignment metal silicides barrier layer on the substrate to overlap the grid structure and the surface of exposed substrate; making annealing practice, and when the annealing practice is made, the self-alignment metal silicides barrier layer will generate a tensile stress to make the substrate under the grid structure suffered the tensile stress; removing a portion of self-alignment metal silicides barrier layer to expose a portion of grid structure and a portion of substrate surface; making the self-alignment metal silicides process.

Description

technical field [0001] The invention relates to a semiconductor process, in particular to a manufacturing method of a semiconductor element and a method for adjusting the lattice distance of the channel region of the element. Background technique [0002] Early Metal-Oxide Semiconductor (MOS) devices are composed of a metal gate layer, a silicon oxide gate dielectric layer and a semiconductor silicon substrate. However, because most metals have poor adhesion to silicon oxide, most current gate layers are made of polysilicon. However, the use of polysilicon has led to other problems, such as the degradation of device performance due to the high resistance of polysilicon. Therefore, the currently adopted method is to perform a silicide process after the device is formed to form a layer of metal silicide on the gate layer and the source / drain region, thereby reducing the resistance of the device. [0003] On the other hand, a wafer can usually be divided into a main element a...

AI Technical Summary

Problems solved by technology

However, on the other hand, as the device size becomes smaller and smaller, the effect of the lattice distance in the channel region 128 on the charge mobility becomes more and more significant, and this will become a key factor affecting device performance

Images