Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Plasma etching device exhaustring

A plasma and etching device technology, which is applied in the manufacturing of plasma, electrical components, semiconductor/solid-state devices, etc., can solve the problems of affecting the process window, reducing the gas conduction efficiency, etc., and achieve the effect of increasing the grounding area

Active Publication Date: 2006-10-25
BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The feature of this design is to use through holes or tapered round holes to achieve plasma shielding, but because some of the holes in this structure are blind holes, the gas conduction efficiency is reduced and the process window is affected

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Plasma etching device exhaustring
  • Plasma etching device exhaustring
  • Plasma etching device exhaustring

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] The exhaust ring structure of this embodiment is as follows Figure 7 , 8 shown. in, Figure 7 is a top view of the exhaust ring of the present embodiment, Figure 8 It is a vertical section along the A-A line. The upper part of the funnel-shaped hole is cone-shaped, and its cone angle is in the range of 10° to 45°, which is 3° in this embodiment. The lower part of the funnel-shaped hole is cylindrical, and the inner diameter of the cylinder should be smaller than the thickness of the plasma sheath, which is usually about 1-2mm. On the upper surface of the exhaust ring, that is, on the side surface 15 in contact with the plasma, there is an insulating coating sprayed Y 2 o 3 The material has a thickness of 50-150 μm, which is 100 μm in this embodiment. due to Y 2 o 3 The corrosion resistance is high, therefore, during the implementation of the etching process, damage can be reduced, pollution can be reduced, and the yield rate can be improved.

[0036] The exh...

Embodiment 2

[0038] The exhaust ring structure of this embodiment is as follows Figure 9 shown. in, Figure 9 It is a perspective view of the exhaust ring of this embodiment. It can be seen that the holes on the exhaust ring are elongated. The upper taper angle of the funnel-shaped hole of the hole is 40°. On the plasma space side surface of the exhaust ring, there is an insulating coating sprayed with Al 2 o 3 material with a thickness of 150 μm. Thanks Al 2 o 3 The corrosion resistance is high, therefore, during the implementation of the etching process, damage can be reduced, pollution can be reduced, and the yield rate can be improved.

[0039] According to the present invention, by adopting the funnel-shaped exhaust ring structure, plasma leakage can be suppressed, the grounding area can be increased, and abnormal plasma discharge can be suppressed. 2 o 3 or Al 2 o 3 Spraying can reduce exhaust ring damage, reduce metal particle pollution, and improve yield.

Embodiment 3

[0041] The exhaust ring structure of this embodiment is as follows Figure 9 As shown, the holes on the exhaust ring are elongated. In this embodiment, the upper taper angle of the funnel-shaped hole of the hole is 5.5°. On the surface of the plasma space side of the exhaust ring, there is an insulating coating sprayed Y 2 o 3 material with a thickness of 50 μm. due to Y 2 o 3 The corrosion resistance is high, therefore, during the implementation of the etching process, damage can be reduced, pollution can be reduced, and the yield rate can be improved.

[0042] According to the present invention, by adopting the funnel-shaped exhaust ring structure, plasma leakage can be suppressed, the grounding area can be increased, and abnormal plasma discharge can be suppressed. 2 o 3 or Al 2 o 3 Spraying can reduce exhaust ring damage, reduce metal particle pollution, and improve yield.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Login to View More

Abstract

This invention puts forward an air vent ring of an etching device of plasmas, in which, the ring includes a through hole and the best selection of the shape of the section is a filter. Advantage: it is favorable to the conduction of the reacting gas due to the through hole on the ring, at the same time, since the section is a filter, the earth area is increased and plasmas are limited in a region.

Description

technical field [0001] The invention relates to a plasma etching device, in particular to an exhaust ring of a plasma etching device with controllable reaction gas temperature. Background technique [0002] Plasma etching equipment is used to process and manufacture microelectronic chips, and then form microelectronic circuits. This production process is called dry etching. Generally speaking, dry etching needs to form plasma in the reaction chamber, so it is necessary to apply radio frequency to the upper dielectric window of the reaction chamber, so that the process gas entering the reaction chamber is excited into plasma, and then the microelectronic chip processing is carried out. Since the material of the reaction chamber is generally aluminum, although the surface of the reaction chamber has been treated (generally anodized), it will still react with the reactive gas plasma, resulting in damage to equipment parts or deposition of polymers. Therefore, it is necessary t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/00C23F4/00H01J37/32H01L21/3065H01L21/67H05H1/00
Inventor 赵梦欣
Owner BEIJING NAURA MICROELECTRONICS EQUIP CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com