Electro-optical device, manufacturing method thereof, and electronic apparatus

A technology of electro-optical devices and side electrodes, which is applied to identification devices, optics, circuits, etc., and can solve problems such as reduced light-shielding performance, reduced display quality, and complicated manufacturing methods

Inactive Publication Date: 2006-10-18
SEIKO EPSON CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0008] However, if the above-mentioned various conventional technologies are adopted, the multilayer structure on the substrate will basically be highly complicated with the increase in functionality and performance.
This further leads to high complication of the manufacturing method, reduction of manufacturing yield, etc.
Conversely, if the laminated structure and manufacturing process on the substrate are simplified, there may be a reduction in the light-shielding performance, especially deterioration caused by moisture and moisture in the TFTs constituting the pixels and peripheral circuits, and Technical problem of degradation of display quality due to degradation of image signal accompanying this

Method used

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  • Electro-optical device, manufacturing method thereof, and electronic apparatus
  • Electro-optical device, manufacturing method thereof, and electronic apparatus
  • Electro-optical device, manufacturing method thereof, and electronic apparatus

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no. 1 Embodiment approach

[0051] For the liquid crystal device of the first embodiment of the present invention, refer to Figure 1 ~ Figure 1 0 for explanation.

[0052] First, refer to figure 1 and figure 2 , the overall configuration of the liquid crystal device of this embodiment will be described. it's here, figure 1 is a plan view showing the overall structure of the liquid crystal device of this embodiment, figure 2 yes figure 1 Sectional view at line H-H'.

[0053] exist figure 1 and figure 2 In the liquid crystal device of this embodiment, the TFT array substrate 10 and the counter substrate 20 are arranged facing each other. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the opposing substrate 20, and the TFT array substrate 10 and the opposing substrate 20 are arranged around the image display region 10a as an example of the "pixel array region" of the present invention. The sealing material 52 of the sealing area is bonded to each other.

[0054] exi...

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PUM

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Abstract

An electro-optical device having a pixel-switching thin film transistor disposed below the data lines on a substrate and a storage capacitor with a stacked structure of a high-potential electrode, a dielectric layer, and pixel-potential electrode that is disposed in an area including a region opposed to a channel region of the pixel-switching thin film transistor and disposed above the data lines. A pixel electrode is disposed above the storage capacitor for each pixel and a peripheral circuit is disposed in a peripheral area located around a pixel array area in which the pixels are arranged. The dielectric layer includes a non-opened area located between opened areas of the pixels. A peripheral dielectric layer area includes a region opposed to a channel region of a peripheral-circuit thin film transistor which is disposed below the storage capacitor and constitutes the peripheral circuit.

Description

technical field [0001] The present invention relates to the technical fields of electro-optical devices such as liquid crystal devices, their manufacturing methods, and electronic equipment such as liquid crystal projectors. Background technique [0002] Such an electro-optical device includes pixel electrodes, scanning lines for selectively driving the pixel electrodes, data lines, and a TFT (Thin Film Transistor, thin film transistor) as a pixel switching element on a substrate, and is configured to be capable of Perform active matrix driving. In addition, for the purpose of high contrast, etc., a storage capacitor may be provided between the TFT and the pixel electrode. The above constituent elements are fabricated at high density on a substrate to achieve an improvement in the pixel aperture ratio, miniaturization of the device, etc. (for example, refer to Patent Document 1). [0003] As described above, electro-optical devices are required to further improve display q...

Claims

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Application Information

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IPC IPC(8): H01L27/02G02F1/136G09F9/30
Inventor 山崎康二
Owner SEIKO EPSON CORP
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