Single programmable read-only memory and method of manufacture

A manufacturing method and memory technology, which are applied in semiconductor/solid-state device manufacturing, electrical solid-state devices, semiconductor devices, etc., can solve the problems of inconsistent characteristics of memory cells, easy leakage, etc. crash effect

Inactive Publication Date: 2006-10-04
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] In view of this, the object of the present invention is to provide a one-time programmable read-only memory and its manufacturing method to improve the problem of inconsistency in memory cell characteristics and easy leakage under reverse bias

Method used

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  • Single programmable read-only memory and method of manufacture
  • Single programmable read-only memory and method of manufacture
  • Single programmable read-only memory and method of manufacture

Examples

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no. 1 example

[0049] Figure 1A It is a three-dimensional structure diagram of the one-time programmable read-only memory in the first embodiment of the present invention. Figure 1B and Figure 1C are respectively Figure 1A The sectional view of the line A-A' and the sectional view of the line B-B'. Figure 1D It is a schematic diagram of an equivalent circuit of the one-time programmable read-only memory of the present invention.

[0050] see Figure 1A As shown in FIG. 1C, the one-time programmable read-only memory of the present invention is at least composed of a P-type semiconductor substrate 100, an N-type doped region 102, a P-type doped layer 104, an N-type doped layer 106, and an antifuse layer. 108 , an etching stop layer 110 , an interlayer insulating layer 112 , and a conductive layer 114 .

[0051] The N-type doped region 102 is disposed in the P-type semiconductor substrate 100 . The P-type doped layer 104 is disposed in the P-type semiconductor substrate 100 and located on ...

no. 2 example

[0085] Figure 10A It is a three-dimensional structure diagram of the one-time programmable read-only memory in the second embodiment of the present invention. Figure 10B and Figure 10C are respectively Figure 10A The sectional view of the line A-A' and the sectional view of the line B-B'. exist Figure 10A to Figure 10C, members with Figure 1A The same symbols as in FIG. 1C are given the same reference numerals, and description thereof will be omitted. Only the differences between this embodiment and the first embodiment are discussed here.

[0086] see Figure 10A Referring to FIG. 10C , in this embodiment, the antifuse layer 108 and the etch stop layer 110 are not directly sequentially disposed on the semiconductor substrate 100 (such as Figure 1A 1C ), but the interlayer insulating layer 112 is directly disposed on the semiconductor substrate 100 . The insulating layer 112 has a trench 118 directly exposing the N-type doped layer 106 . The antifuse layer 118 a is ...

no. 3 example

[0099] Figure 13A It is a three-dimensional structural schematic diagram of the one-time programmable read-only memory of the third embodiment of the present invention. Figure 13B and Figure 13C are respectively Figure 13A The sectional view of the line A-A' and the sectional view of the line B-B'. exist Figure 13A to Figure 13C, members with Figure 1A The same symbols as in FIG. 1C are given the same reference numerals, and description thereof will be omitted. Only the differences between this embodiment and the first embodiment and the second embodiment are discussed here.

[0100] see Figure 13A Referring to FIG. 13C , in this embodiment, the N-type doped layer 106a is not formed with sharp corners, but has a flat surface.

[0101] In the above-mentioned one-time programmable read-only memory, since the PN diode is formed in the semiconductor substrate 100, its material is a grown monocrystalline silicon semiconductor substrate, a crystalline silicon semiconductor...

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Abstract

The invention relates to a single time programmer read-only memory and it's making method. The single time programmer read-only memory at least comprises a P-type semiconductor base, a N-type doping area, a P-type first doping layer, a P-type second doping layer, a conductive layer, a N-type first doping layer and an inverse fuse layer. The N-type doping area is positioned on the P-type semiconductor base. The P-type first doping layer is positioned in the P-type semiconductor base upper than the N-type doping area. The P-type second doping layer has a high doping density which is positioned between the N-type doping area and the P-type first doping layer; the P-type second doping layer is bar type as a bit line. The conductive layer is positioned on the P-type semiconductor base which is bar type and is vertical to the P-type first doping layer. The N-type first doping layer is positioned on the P-type semiconductor base. The inverse fuse layer is positioned between the conductive layer and the N-type first doping layer.

Description

technical field [0001] The present invention relates to a semiconductor element and its manufacturing method, and in particular to a one-time programmable read-only memory and its manufacturing method. Background technique [0002] When the function of the computer microprocessor (Microprocessor) becomes stronger and stronger, and the programs and calculations performed by the software become larger and larger, the demand for memory becomes higher and higher. Therefore, how to manufacture large-capacity and cheap memory to meet this demand has become a major issue for semiconductor manufacturers. According to the difference of read / write function, the memory can be simply divided into two types: read only memory (ReadOnly Memory; ROM) and random access memory. [0003] Since the ROM has the non-volatile characteristic that the data stored therein will not be lost due to power interruption, many electrical products must have this type of memory in order to maintain the norma...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/115H01L21/8247G11C16/00
Inventor 何家骅施彦豪龙翔澜洪士平李士勤
Owner MACRONIX INT CO LTD
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