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Thin film transistor, method for producing thin film transistor and pixel structure

A technology of thin film transistors and manufacturing methods, applied in the fields of thin film transistors and their manufacturing, and pixel structure manufacturing, can solve problems affecting the electrical performance of the channel layer 140, and achieve the effect of improving the manufacturing pass rate

Inactive Publication Date: 2006-08-23
CHUNGHWA PICTURE TUBES LTD
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

However, since the thickness of the Ohmic contact material layer 150 of each thin film transistor 100 in the array is not necessarily equal, the channel layer 140 is often over-etched in the thin film transistor 100 with a thinner Ohmic contact material layer 150. situation, thus affecting the electrical performance of the channel layer 140

Method used

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  • Thin film transistor, method for producing thin film transistor and pixel structure
  • Thin film transistor, method for producing thin film transistor and pixel structure
  • Thin film transistor, method for producing thin film transistor and pixel structure

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Embodiment Construction

[0027] Figure 2A-2E It is a schematic cross-sectional view of a manufacturing process of a thin film transistor in a preferred embodiment of the present invention. First, please refer to Figure 2A , forming a gate 220 on the substrate 210 . In one embodiment, the method of forming the gate 220 is, for example, depositing a conductive layer (not shown in the figure) on the substrate 210 first, and then using a photomask (not shown in the figure) to cooperate with the photolithography process to The conductive layer is patterned to form a gate 220 on the substrate 210 . The photolithography steps mentioned above are common semiconductor manufacturing processes, so the details of these steps are well known to those skilled in the art and will not be repeated here.

[0028] Next, please refer to Figure 2B , a gate insulating layer 230 is formed on the substrate 210 to cover the gate 220 . The method of forming the gate insulating layer 230 is, for example, physical vapor d...

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Abstract

Present invention relates to thin film transistor, thin film transistor and dot structure manufacturing method. It contains firstly forming grid on substrate, then forming gate insulating layer on substrate to cover grid, forming source / drain layer on gate insulating layer and source / drain layer exposing out part gate insulating layer above gate, finally forming channel layer on gate insulating layer above gate. Said method can avoid channel layer damage duo to over etching, to raise thin film transistor and dot structure making qualification rate.

Description

technical field [0001] The present invention relates to a semiconductor element and its manufacturing method, and in particular to a thin film transistor, its manufacturing method and pixel structure manufacturing method. Background technique [0002] The display is the communication interface between people and information, and flat-panel displays are currently the development trend. There are mainly the following types of flat panel displays: Organic Electro-Luminescence Display (OELD), Plasma Display Panel (PDP) and Thin Film Transistor Liquid Crystal Display (TFT-LCD). Among them, thin film transistor liquid crystal display is the most widely used. [0003] The thin film transistor liquid crystal display is mainly composed of a thin film transistor array substrate, a color filter array substrate and a liquid crystal layer, wherein the thin film transistor array substrate is composed of a plurality of pixel units arranged in an array. Wherein, each pixel unit is compose...

Claims

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Application Information

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IPC IPC(8): H01L21/336H01L29/786G02F1/136
Inventor 陈俊宏李育舟
Owner CHUNGHWA PICTURE TUBES LTD
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