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Cmp of noble metals

A technology of mechanical polishing and precious metals, which is applied in the direction of polishing compositions containing abrasives, electrical components, circuits, etc., and can solve problems such as difficult removal and mechanical hard tolerance

Inactive Publication Date: 2006-08-02
CABOT MICROELECTRONICS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Precious metals present a particular problem in that they are mechanically hard and chemically resistant, making them difficult to remove effectively by chemical-mechanical polishing

Method used

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Examples

Experimental program
Comparison scheme
Effect test

example 1

[0034] This example demonstrates the role of oxidizing agents in the polishing of ruthenium within the scope of the polishing system.

[0035]Ruthenium dissolution and corrosion rates were evaluated electrochemically in the presence of different polishing compositions (Polishing Compositions 1A-1D) using a ruthenium rotating disk electrode (RDE). The ruthenium electrode was rotated at 500 rpm and held in contact with the polishing pad with a downforce of 90 kPa (13 psi). The metal dissolution rate was evaluated while grinding the surface of the electrode (dissolution rate) and after abrasion (corrosion rate). Ruthenium activity was measured as current density and then recalculated as dissolution or corrosion rate (in Å / min) using Faraday's law.

[0036] Each polishing composition (except Polishing Composition 1A) contained an oxidizing agent at a concentration of about 1 N and had a pH of about 1. Ruthenium dissolution and corrosion rates were measured for each chemical-mech...

example 2

[0040] This example demonstrates the effect of oxidizing agents on polishing iridium in the context of polishing systems.

[0041] The dissolution and corrosion rates of iridium were electrochemically evaluated in the presence of different polishing compositions (Polishing Compositions 2A-2E) using an iridium rotating disk electrode (RDE). The iridium electrode was rotated at 500 rpm and held in contact with the polishing pad with a down force of 90 kPa (13 psi). The metal dissolution rate was evaluated while grinding the surface of the electrode (dissolution rate) and after abrasion (corrosion rate). Iridium activity was measured as current density and then recalculated as dissolution rate or corrosion rate (in Å / min) using Faraday's law.

[0042] Each polishing composition (except Polishing Composition 2A) contained an oxidizing agent at a concentration of about 1N and had a pH of about 1. The dissolution and corrosion rates of iridium were measured for each chemical-mecha...

example 3

[0046] This example compares the effect of oxidizing agents in a polishing system on polishing iridium-containing substrates.

[0047] Similar substrates containing iridium, silicon oxide and silicon nitride were polished with different polishing compositions (Polishing Compositions 3A-3F). Each polishing composition contained 4% by weight silica and had a pH of about 4. In addition, each polishing composition (except Polishing Composition 3A) contained an oxidizing agent. The identity and concentration of the oxidizing agents in each of Polishing Compositions 3B-3F are listed in Table 3.

[0048] The iridium removal rate (RR) and intra-wafer non-uniformity (WIWNU) were determined for each chemical-mechanical polishing system and the results are summarized in Table 3.

[0049] polishing composition

[0050] The results demonstrate that the method of the present invention can be used to polish a noble metal containing substrate at a relatively high rate. In particu...

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PUM

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Abstract

The invention provides a method of polishing a substrate comprising (i) contacting a substrate comprising a noble metal layer with a chemical-mechanical polishing system comprising (a) a polishing component, (b) an oxidizing agent, and (c) a liquid carrier, and (ii) abrading at least a portion of the noble metal layer to polish the substrate. The polishing component is selected from the group consisting of an abrasive, a polishing pad, or a combination thereof, and the oxidizing agent is selected from the group consisting of bromates, bromites, hypobromites, chlorates, chlorites, hypochlorites, perchlorates, iodates, hypoiodites, periodates, peroxyacetic acid, organo-halo-oxy compounds, salts thereof, and combinations thereof. The chemical-mechanical polishing system has a pH of 9 or less, and the oxidizing agent does not produce a substantial amount of elemental halogen. The invention also provides a method of polishing a substrate comprising a noble metal layer and a second layer using the aforementioned polishing system that further comprises a stopping compound.

Description

technical field [0001] The invention relates to a method of polishing a substrate comprising a noble metal. Background technique [0002] Compositions and methods for planarizing or polishing a substrate surface are well known in the art. Polishing compositions (also known as polishing slurries) typically contain abrasive materials in an aqueous solution and are applied to a surface by contacting the surface with a polishing pad saturated with the slurry composition. Typical abrasive materials include silica, ceria, alumina, zirconia and tin oxide. For example, US Patent No. 5,527,423 describes a method for chemical-mechanical polishing of a metal layer by contacting the surface with a polishing slurry comprising highly purified refined metal oxide particles in an aqueous medium. Alternatively, abrasive materials can be incorporated into the polishing pad. US Patent 5,489,233 discloses the use of polishing pads having surface textures or patterns, and US Patent 5,958,794 ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02H01L21/302C23F3/00H01L21/321
CPCC23F3/00C09G1/02H01L21/3212H01L21/304
Inventor 弗朗切斯科·德雷杰特萨乌罗弗拉斯塔·布鲁西奇本杰明·P·拜尔
Owner CABOT MICROELECTRONICS CORP
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