Multiple-edge big grain size dispersed fluorescent powder and white light diode using same
A diode and white light technology, applied in the field of semiconductor light emitting diodes and spectral converters, can solve the problems of low light intensity and insufficient light intensity at small angles
Inactive Publication Date: 2010-09-08
罗维鸿
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Problems solved by technology
Although similar instruments are widely used, they have serious drawbacks: the small-angle light intensity of these structures is very low
In this way even white light with light intensity J≤20 candelas can be generated from the heterojunction surface by using special prisms, which is not enough for the use of structurers on special signaling equipment, such as railway signal lights
The combination of light-emitting diodes and large-angle optical structures cannot make the light flow value reach Φ≤2-4 lumens, which is of course not enough for economical lighting
Method used
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Abstract
This invention relates to semi-conductor and lighting technology, specificly about semiconductor white light light-emitting diode, which can be used to constitute lighting system and used in manufacture, life and ornament. The recommendatory ight-emitting diode is heterogeneous knot based mainly by gallium nitride and indium nitride, and it is equipped with gadolinium-yttrium-lutetium group. The optical spectrum converter current equation of ceriumcatalytic scattering luminescence powder, which has multiple edges and big partcle size, is: Gd3-x-y-zYxLuyCezAlpOq, and the range of chemical indexes change as follows: 1. 0<x<2. 6, 0. 0001<=y<=0. 5, 0. 0001<=z<=0. 5, 4. 7<=z<=5. 3, q=4. 5+1. 5*p. The luminescence powder, which is painted on the surface and end face of the heterogeneous knot, again radiates short-wave blue light excited by the heterogeneous knot, accordingly issue wide band yellow-orange light, which composes with the blue light and forms homogeneous anamorphic white light.The big-particle luminescence powder has no light scattering totally and high quantum outputing value, so very high light intensity is grantuated, which is over 100 candelas, and its radiation angle is small (2theta=6degree).
Description
technical field The present invention belongs to semiconductor and lighting technology, specifically to semiconductor light-emitting diode technology, specifically, based on gallium nitride indium nitride semiconductor heterojunction white light diode, the radiation wavelength is less than 470nm, and the equipment is composed of gadolinium-yttrium-lutetium, cerium Spectral converter of catalyzed polygonal facet large particle size dispersed phosphor. Background technique Nowadays, due to the advancement of semiconductor technology, semiconductor lighting technology has developed rapidly. It is mainly manifested in the invention of various instruments and equipment to replace all electric vacuum bulbs. Currently used for lighting purposes mainly to produce white light diodes. In these light-emitting diodes, the heterojunction is mainly indium nitride and gallium nitride, and its wavelength is less than λ=475nm. The blue or other short-wave interacts with the inorganic part...
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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/54C09K11/80
CPCY02B20/181Y02B20/00
Inventor 索辛那姆
Owner 罗维鸿
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