Solid-state image pickup device and drive method thereof

A driving method, solid-state imaging technology, applied in image communication, signal generator with a single pickup device, picture signal generator, etc., can solve problems such as increased folding noise

Inactive Publication Date: 2006-05-17
SONY GRP CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, modes with spatial frequencies equal to or higher than the Nyquist frequency are relatively increased, which leads to an increase in the folding noise
Furthermore, in the pixel skipping and readout method in which pixels to be read out have two or more distances between pixels, since pixels have different spatial frequencies for each interval, aliasing noise increases

Method used

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  • Solid-state image pickup device and drive method thereof
  • Solid-state image pickup device and drive method thereof

Examples

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no. 1 example

[0054] figure 1 is a block diagram showing an example of the structure of the solid-state imaging device according to the first embodiment of the present invention. In an example described in this embodiment, an X-Y addressable solid-state imaging device of a type for simultaneously reading out pixel information of one line, such as a CMOS image sensor, is used as the solid-state imaging device.

[0055] Such as figure 1 As shown, the solid-state imaging device according to this embodiment includes a sensor unit 11, a vertical shift register 12, a shutter shift register 13, a CDS (correlated double sampling) circuit 14, a memory circuit unit 15, a horizontal shift register 16, a horizontal A data line 17 , an amplifier unit (AMP) 18 , an AD converter (ADC) 19 , a digital amplifier 20 , and a timing generator 21 .

[0056] The sensor unit 11 has a structure in which pixels are arranged in a matrix and wiring row selection lines, shutter lines, vertical data lines, and the l...

no. 2 example

[0089] The structure of the solid-state imaging device according to the second embodiment of the present invention is basically the same as figure 1 The shown solid-state imaging device according to the first embodiment has basically the same structure. However, in the solid-state imaging device according to this embodiment, when k is a positive integer equal to or greater than 0, in the process of compressing the pixel information amount at a ratio of 1 / (k+2)×(k+2), (k+2)×(k+2) pixels are skip-added in a state where analog pixel blocks (unit pixel blocks) to be skip-added are arranged overlapping each other, whereby pixel information is skipped in a state where aliasing noise is reduced. The solid-state imaging device in this embodiment will be specifically exemplified with reference.

[0090] (first specific example)

[0091] In the case of the first specific example, k=0, in other words, four (2×2) pixels are skip-added and the pixel information amount is compressed at a...

no. 3 example

[0129] Figure 18 is a block diagram showing an example of the structure of the solid-state imaging device according to the third embodiment of the present invention. In this figure, the equivalent of figure 1 Those parts of the parts in . In the solid-state imaging device according to this embodiment, again, an X-Y addressable solid-state imaging device of a type for simultaneously reading out pixel information of one line, such as a CMOS image sensor, is used as the solid-state imaging device.

[0130] In the structure employed in the solid-state imaging device according to this embodiment, two memory circuits 15A and 15B capable of storing pixel information of one row in the sensor unit 11 are used as the memory circuit unit 15 . In this respect, the solid-state imaging device according to this embodiment is different from the solid-state imaging device according to the first embodiment in terms of the structure. The solid-state imaging device according to this embodime...

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Abstract

If pixel reading is simply skipped while keeping the pixel information order and spatial positional relationship the same as in the read-all-pixels mode, the distance between the read-out pixels increases. Thus reducing the Nyquist frequency and increasing the folding noise. A 5×5 pixel block is used as a unit pixel block. The pixel information in the first, third and fifth rows of the first, third and fifth columns of the pixel arrangement is added as an output of the ath row and ath column of the unit pixel block and output. The pixel information of the first, third and fifth rows of the sixth, eighth and tenth columns of the pixel arrangement is added as an output of the ath row and bth column of the unit pixel block and output. Addition and output are repeated in the same manner until the last row or a row close to the last row. Afterwards, the pixel information of the sixth, eighth and tenth rows of the first, third and fifth columns are added together as the output of the bth row and ath column of the unit pixel block and output. Similar operations are repeated so that sparse addition is repeated for readout of all arbitrary pixels.

Description

technical field [0001] The present invention relates to a solid-state imaging device and a driving method thereof, in particular to a solid-state imaging device using an X-Y addressable solid-state imaging device and a driving method thereof. Background technique [0002] Solid-state imaging devices are roughly classified into charge-transfer solid-state imaging devices represented by, for example, CCD (Charge Coupled Device) image sensors and X-Y addressable solid-state imaging devices represented by, for example, CMOS (Complementary Metal Oxide Semiconductor) image sensors. Such solid-state imaging devices are used in various video devices, such as video cameras for taking moving images and electronic cameras for taking still images, as imaging devices therein. [0003] Conventionally, when a CCD image sensor is used as an imaging device in a 1CCD color camera, in so-called pixel skipping processing for skipping pixel information, for example, a method of reading out all p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/146H04N9/07H04N5/335H04N5/345H04N5/357H04N5/374H04N5/376H04N9/04
CPCH04N25/445H04N25/46H04N25/70H04N25/447H04N25/76H04N25/134H04N25/00H04N23/12
Inventor 和田孝政船津英一马渕圭司中岛健广田克明佐藤伸行阿部高志梅田智之中村信男藤田博明佐藤弘树
Owner SONY GRP CORP
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