Transistor with magneto resistnace
A magnetoresistance and transistor technology, applied in the field of magnetoresistance transistors, can solve the problems of difficult manufacturing process, difficult structure miniaturization, high production cost, etc.
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[0031] figure 1 It is a schematic diagram of the structure of the magnetoresistive transistor of the first embodiment of the present invention, which proves that the structure of the present invention can indeed increase the rate of change of the base current. In this structure, a current perpendicular to the planes (CPP) structure is formed by stacking the magnetoresistive component 110 , the passive component 130 and the ohmic contact layer 131 . The magnetoresistive component 110 is used as an emitter and a base, and the passive component 130 is a p-n diode containing a pn junction, and the passive component 130 is formed on a silicon substrate as a collector; at the same time, the lower surface of the passive component 130 is plated with The titanium layer and the gold layer are used as the ohmic contact layer 131 ; the magnetoresistive element 110 is used as the emitter, which can provide different resistances with or without an external magnetic field. In the first embo...
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