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Device and method for preparing solid thin-membrane lithium battery by in-situ deposition

An in-situ deposition, all-solid-state technology, applied in the field of electrochemistry, can solve the problems of interface contamination and mutual contamination between materials of all-solid-state thin-film lithium batteries, and achieve the effect of small capacity decay performance, small interface resistance, and avoiding mutual contamination.

Inactive Publication Date: 2006-03-15
FUDAN UNIV
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Problems solved by technology

Obviously, to complete the deposition of the most basic four-layer film of an all-solid-state thin-film lithium battery, at least once during the preparation process, it is necessary to open the chamber to replace the target material and the corresponding mask (mask) that defines the shape of the deposited film, so that Not only will it cause contamination of the interface of the all-solid-state thin-film lithium battery, but the deposition of thin films of different materials in the same chamber will also cause mutual contamination between materials

Method used

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  • Device and method for preparing solid thin-membrane lithium battery by in-situ deposition
  • Device and method for preparing solid thin-membrane lithium battery by in-situ deposition
  • Device and method for preparing solid thin-membrane lithium battery by in-situ deposition

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preparation example Construction

[0024] The preparation sequence and graphics of each layer of thin film in an all-solid-state thin-film lithium battery are as follows: figure 2 shown.

[0025] The preparation of the electronic current collector thin film adopts metal Pt (or other suitable metals, such as: Au, Ti, V, etc.) fluid film. The sputtering conditions are: the background pressure of the deposition chamber reaches 1×10 -3 After Pa, the control system (10) moves the transfer trolley 1 to the DC sputtering deposition chamber ①, and automatically or manually controls the mask of the deposition chamber to rise to a distance less than 3mm from the substrate (such as 0.1-3mm) ), the distance from the target to the substrate is 4-8cm; the target should be pre-sputtered for 30-60min before depositing the film, the sputtering atmosphere is pure argon, the working pressure is 0.5-2.5Pa, and the deposition power is 30-150W. The substrate can be a ceramic sheet, a quartz sheet, a glass sheet or a silicon sheet...

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Abstract

The equipment for preparing solid film Li-ion battery by in-situ deposition process comprises four chambers for depositing film, and a glove box. Different kind of films are prepared in different chamber: DC magnetron sputtering chamber is used to prepare electronic current collector film; DC or RF magnetron sputtering chamber is used to prepare each cathode film; RF magnetron sputtering chamber is used to prepare each electrolyte film; vacuum heat evaporation chamber is used to prepare each metal anode film.

Description

technical field [0001] The invention belongs to the technical field of electrochemistry, and in particular relates to a device and a method for "in-situ" preparation of an all-solid-state thin-film lithium battery. Background technique [0002] In the past ten years, the miniaturization, miniaturization and integration of electronic products have become the general trend of the development of electronic technology in the world. Micro-electro-mechanical systems (MEMS), such as micro-sensors, micro-transmission mechanisms, etc., have become an important research and development field of microelectronics technology in recent years. However, the existing energy supply system has been difficult to meet the growing demand for miniaturization and integration of MEMS systems. requirements. Since the all-solid-state thin-film lithium battery can be prepared by semiconductor deposition thin-film technology, not only its thickness can be as small as 10 microns, but also this type of b...

Claims

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Application Information

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IPC IPC(8): H01M10/38H01M10/40H01M6/16C23C14/22H01M10/058
CPCY02E60/122Y02E60/10Y02P70/50
Inventor 秦启宗傅正文刘文元
Owner FUDAN UNIV
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