MIS capacitor and production method of MIS capacitor

Abstract

The present invention provides a MIS capacitor and a production method of MIS capacitor. A silicon wafer, with a diffusion area formed in a predetermined region on one side, comprises a lower electrode of a capacitor unit. A first metal layer is connected to a first power supply wiring (VDD) and comprises an upper electrode of the capacitor unit. Second metal layers are connected to a second power supply wiring (GND) and are also formed on the side where diffusion area is formed on silicon wafer. An oxide film is placed between the first metal layer and the surface of the silicon wafer where the diffusion area is formed.

Description

Technical field [0001] The present invention relates to a MIS (metal-insulator-silicon) capacitor and a manufacturing method of the MIS capacitor. Background technique [0002] It is mentioned in Japanese Patent Laid-Open No. 6-21263 that a plurality of logic cells mounted on an integrated circuit are connected to the power supply wiring VDD and the power supply wiring GND and mounted on the integrated circuit. The area between the logic cells is the formation area of ​​the metal wiring for connection based on the logical connection information. [0003] The crosstalk noise between wirings and the simultaneous switch noise of the transistors (simultaneous switch noise) often cause voltage changes in the power wiring voltage on the integrated circuit. This voltage change causes a decrease in the operating speed of the transistor and malfunctions. In view of this, in order to control the voltage change, Japanese Patent Laid-Open No. 2001-185624 discloses a technique of installing a...

AI Technical Summary

Problems solved by technology

[0007] like figure 1 and figure 2 The described capacitor 50 utilizing the gate oxide film of the transistor has the following problems: while increasing the area of ​​the polysilicon gate 51 used as an electrode in order to increase the capacitance C1 of the capacitor 59, the area of ​​the polysilicon gate 51 on the electrode is also increased. resistor, and reduces the capacitance C1 of capacitor 59 effective for high frequency noise

As the gate oxide film becomes thinner, the capacitance C1 of the capacitor increases, and the leakage current also increases

And this leads to problems such as increased power consumption of the chip itself that makes up the capacitor, and the fact that transistors cannot be used as capacitors, etc.

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