Eureka AIR delivers breakthrough ideas for toughest innovation challenges, trusted by R&D personnel around the world.

Method for realizing memory-type power amplifier linearization and its baseband predistortion device

A power amplifier and predistortion technology, applied in the field of communication, can solve the problems of out-of-band spectrum leakage and in-band distortion of the power amplifier, and achieve the effect of reducing the complexity of implementation and the amount of calculation.

Inactive Publication Date: 2006-02-08
XIDIAN UNIV
View PDF0 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The purpose of the present invention is to overcome the deficiencies of the above-mentioned prior art, and provide a simple and effective method for realizing the linearization of a memory power amplifier based on digital pre-distortion technology and its baseband pre-distortion device, so as to solve the problem of memory effect when transmitting broadband signals Out-of-band spectrum leakage and in-band distortion problems of power amplifiers, and improve the efficiency of power amplifiers

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for realizing memory-type power amplifier linearization and its baseband predistortion device
  • Method for realizing memory-type power amplifier linearization and its baseband predistortion device
  • Method for realizing memory-type power amplifier linearization and its baseband predistortion device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] Attached below figure 2 Specific embodiments of the present invention are described in detail.

[0030] The baseband predistortion device proposed by the present invention includes: a narrowband training sequence generation unit, a transversal filter unit, a memoryless predistortion unit, a delay unit, an error prediction unit 1, an error prediction unit 2, an adaptive iterative algorithm unit 1, an adaptive Iterative algorithm unit 2, guide switch K for output control of error prediction unit 1 、K 2 and K 3 , wherein the memoryless predistortion unit, error prediction unit 1 and adaptive iterative algorithm unit 1 constitute an adaptive memoryless predistorter, and the transversal filter unit, error prediction unit 2 and adaptive iterative algorithm unit 2 constitute an automatic Adapt to the equalizer.

[0031] Using the predistortion method proposed by the present invention, figure 2 The implementation steps of the shown baseband predistortion device are as fo...

Embodiment 2

[0049] The function of the memoryless predistortion unit in Step 4 of Embodiment 1 can also be realized by a polynomial method, and its amplitude predistortion function F(r) and phase predistortion function Ψ(r) are

[0050] F(r)=f 1 r+f 3 r 3 +f 5 r 5 +L+f l r l =V T R f (7)

[0051] Ψ(r)= 0 + 1 r 2 + 3 r 4 +L+ m r m =P T R p (8)

[0052] where r=|x 1 (n)|, R f = r r 3 r 5 M r i , R p = 1 ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for realizing memory-type power amplifier linearization and its baseband predistortion device. The method firstly obtains a loop delay and a parameter of the memoryless predistortion unit by a narrow band training sequence with a specific frame structure and a corresponding self-adaptive algorithm, then compensates the memory effect of the power amplifier when transmitting the broad band signals by an equalizer and an equalizing arithmetic. The base band predistortion device comprises a narrow band training sequence generating unit, a self-adaptive memoryless predistorter, a self-adaptive equalizer. The output of the narrow band training sequence generating unit is fed to the memoryless predistortion unit, modifies the parameters of the memoryless predistortion unit by the self-adaptive algorithm, inputs the broad band signal sequence to the self-adaptive equalizer after the algorithm is convergent, modifies the parameter of the equalizer to compensate the memory effect of the power amplifier. The invention has a low computation, which is easy to realize and suitable for correcting the non-linear property of the power amplifier with the memory effect and the common power amplifier.

Description

technical field [0001] The invention belongs to the technical field of communication, and relates to a power amplifier linearization technology used in a wireless communication transmitter, in particular to a method for realizing the linearization of a memory-type power amplifier and a baseband pre-distortion device, which are used to compensate the non-linearity of a power amplifier with a memory effect. linear distortion. Background technique [0002] A power amplifier is an indispensable part in a communication system, and there is inevitably nonlinearity between its input and output. Early wireless communications were based on constant envelope modulation techniques that are insensitive to the nonlinearity of power amplifiers, which can make power amplifiers work in near-saturation regions with higher efficiency. However, the disadvantage of low bandwidth utilization of constant envelope modulation severely restricts the development of high-speed data transmission in wi...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03F1/32H03F3/20
Inventor 王勇易克初田红心田斌
Owner XIDIAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com