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Novel metallic film preparation technology on liquid phase substrate surface

A metal film and substrate surface technology, applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem of key parameters not being disclosed, achieve easy research and application, simple preparation process and low cost Effect

Inactive Publication Date: 2006-02-08
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the details and key parameters of how to realize the above metal thin film preparation method are not disclosed.

Method used

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  • Novel metallic film preparation technology on liquid phase substrate surface

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Embodiment 1

[0032] (a) refer to figure 1 , in the vacuum chamber of the vacuum evaporating device, a substrate frame composed of a brushed glass slide 3 coated with a liquid phase substrate 4 with a thickness of 0.2mm and an electric furnace 2, the liquid phase substrate can be made of diffusion pump silicone oil, liquid crystal, or melted glass , a kind of gallium, the evaporation source is formed by evaporating metal material 6 and heating tungsten wire 7, the material of metal evaporation source can be non-magnetic material Au, Ag, Al, Cu or magnetic material Fe, Ni with a purity of 99.9% to 99.99% One of. The liquid surface on the substrate rack faces the evaporation source (up, down, left, and right positions between them are not limited), and the distance between the substrate rack and the evaporation source is 10-15 cm, and they are separated by a baffle plate 5 . The crystal oscillator thickness gauge 1 is installed near the sample, and is used to control the deposition rate in c...

Embodiment 2

[0039] Deposit iron thin film on the surface of liquid phase substrate by radio frequency magnetron sputtering method:

[0040] (a) In the vacuum chamber of radio frequency magnetron sputtering, the liquid phase substrate adopts diffusion pump silicon oil, and the sputtering target material (i.e. thin film material) is a magnetic iron (Fe ) sheet material, the distance between the substrate holder and the sputtering source = 10 cm, and they are separated by a baffle.

[0041] (b) Evacuate the chamber to 6×10 with mechanical pump and molecular pump -4 Pa vacuum.

[0042] (c) Heating in an electric furnace can make the silicone oil adjustable between 5°C and 50°C. At this time, the vapor pressure of the silicone oil substrate is lower than the air pressure in the vacuum chamber;

[0043] (d) Increase the sputtering power to about 10W, degas the surface of the iron target and pre-sputter for 3 minutes. Then open the baffle to start coating. The growth rate of the thin film is...

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Abstract

Disclosed is a novel metallic film preparation technology on liquid phase substrate surface, which comprises using liquid phase material whose saturated vapor tension is lower than the vacuum evaporation pressure as substrate, employing magnetron sputtering or thermal deposition method, evaporating the metal atoms with energy of argon ions in high speed movement or tungsten filament heated by electric current, then depositing the evaporated metal atoms onto liquid phase substrate surface, finally growing metallic film having polycrystalline grain structure through diffusion, core formation, rotation and agglomeration. The film has substantially no internal stress.

Description

technical field [0001] The invention belongs to the technical field of preparation of nanoparticles, nanocrystal grains and metal thin films with free support boundary conditions, and specifically relates to the preparation technology of magnetic and non-magnetic metal thin films using liquid phase materials as substrates at different substrate temperatures. Background technique [0002] In the past few decades, brilliant achievements have been made in thin film science and technology research, and new functional thin films with various unique functions emerge in an endless stream, such as the mature superconducting thin film in the 1970s, the superlattice thin film developed in the 1980s, The giant magnetoresistance (GMR) multilayer film discovered in the early 1990s and the new optoelectronic thin films such as zinc oxide and organic semiconductors that have appeared in recent years have been widely used in modern microelectronics, information, a...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/22C23C14/54
Inventor 叶高翔
Owner ZHEJIANG UNIV
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