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Chemical battery with porous indium phosphide, electrochemical corrosive system and method

An electrochemical and indium phosphide technology, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems that no one has proposed the design of electrochemical cells, and no one has proposed the preparation process of semiconductor materials such as corrosion of porous indium phosphide.

Inactive Publication Date: 2005-12-28
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

[0008] Although scholars from various countries in the world have carried out a series of research on porous indium phosphide, no one has proposed a special electrochemical cell design that is different from other electrochemical corrosion methods for corroding porous indium phosphide and other semiconductor materials. , and no one has proposed the electrochemical corrosion method to corrode the preparation process of semiconductor materials such as porous indium phosphide, this patent solves this problem

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  • Chemical battery with porous indium phosphide, electrochemical corrosive system and method
  • Chemical battery with porous indium phosphide, electrochemical corrosive system and method
  • Chemical battery with porous indium phosphide, electrochemical corrosive system and method

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[0040] In order that the present invention can be more fully understood, it will be illustrated below in conjunction with reference to the accompanying drawings, wherein, figure 1 Schematic illustration of the shape of the auxiliary platinum electrode, where the material used is platinum (99.95%);

[0041] figure 2 The shape of the indium phosphide back electrode is schematically given, where the material used is gold (99.95%):

[0042] image 3For the equipment and corrosion system needed by the present invention, it comprises a potentiostatic galvanostat 1, electrochemical cell 2, the electrochemical system of three electrodes (comprising platinum auxiliary electrode 3, saturated calomel reference electrode 4, and phosphating Indium working electrode 5);

[0043] Figure 4 Be the electrochemical cell designed in the present invention; Fig. 5 is the installation process of this electrochemical cell;

[0044] As an example of the present invention, the following combinat...

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Abstract

The material of electrochemical cell is Teflon. It mainly consists of tank, side cover, blind plate and top cover. The tank is used to hold electrolyte. The side cover is used to fix work electrode. The top cover is used to lead in platinum auxiliary electrode, reference electrode and nitrogen gas. Three electrodes structure is adopted and they are auxiliary electrode, reference electrode and work electrode. The process of electrochemical corrosion includes following steps: a) after cleavage of indium phosphide hander has done, the ultrasound or boiling process is used to wash it; b) removes the oxide layer on surface of indium phosphide hander; c) makes installation of electrochemical cell; d) blows nitrogen gas for 15 minutes; e) applies voltage on it to make corrosion.

Description

technical field [0001] The invention relates to the technical field of porous semiconductor materials, in particular to a special electrochemical cell for corroding porous indium phosphide, an electrochemical corrosion system and a process method. Background technique [0002] For the growth of quantum dots, the key is to achieve controllable size, density and position of quantum dots, and no growth defects. A general method to form semiconductor quantum dot arrays is self-organized crystal growth or selective crystal growth on a suitable mask. The quantum dots formed by the former have a high density, but the position and size are not controllable, while the position and size of the latter are controllable, but due to the limitation of the resolution of lithography technology, the density is not controllable. [0003] The distribution of quantum dots grown in S-K mode is random and the size is not uniform. For the S-K growth mode, when the growth material has a large latt...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/306H01L33/00
Inventor 车晓玲刘峰奇黄秀颀雷文刘俊岐王占国
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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