Method for implanting ions in semiconductor device

An ion implantation, semiconductor technology, applied in semiconductor/solid-state device manufacturing, instruments, table utensils, etc., can solve problems such as differences in electronic characteristics

Active Publication Date: 2011-10-12
SK HYNIX INC
View PDF5 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0014] However, uniform ion implantation as explained above uniformly implants ions in the substrate and from substrate to substrate without any relation to gate CD distribution, thereby producing large differences in electronic characteristics even within the substrate according to the gate CD distribution. difference

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for implanting ions in semiconductor device
  • Method for implanting ions in semiconductor device
  • Method for implanting ions in semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The ion implantation method in the semiconductor device according to the first embodiment of the present invention will be described in detail with reference to the accompanying drawings.

[0032] According to the present invention, the reciprocating scanning speeds in the X and Y directions are set differently according to the position of the substrate used in the non-uniform ion implantation method.

[0033] The present invention is invented based on the technical principle to identify the difference in the critical dimension (CD) of the gate in a substrate, and not cause the difference in the semiconductor device parameters in the substrate by performing non-uniform ion implantation.

[0034] For example, if the critical dimension of the gate in the central portion of the semiconductor is larger than in the edge portion of the substrate, the central portion of the semiconductor device will have a higher threshold voltage (V T ). Therefore, at the threshold voltage (...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

PROBLEM TO BE SOLVED: To provide a method for implanting ions into a semiconductor board which method compensates a threshold voltage gap between the central portion and the peripheral portion of the board created, as a result of uniformly implanting ions into the entire surface of the board, and to provide a manufacturing method for a semiconductor element which the manufacturing method improvesthe nonuniformity of transistor characteristics in the board.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor device, and more particularly to a method for implanting ions into a semiconductor device. Background technique [0002] Recently, more precise control of impurities is a trend in line with the large-scale integration and density of semiconductor devices. Furthermore, in view of mass-manufacturing techniques, reproduction and processing capabilities are required. Therefore, the practical application of the ion implantation method becomes more important. This ion implantation method ionizes impurities and accelerates them by scanning the impurities in predetermined regions on a substrate to implant a predetermined amount of impurities in desired regions. [0003] The ion implantation method described above can selectively implant impurities and implant impurities with high purity. Furthermore, this ion implantation method can control impurities more precisely, so as to provid...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/265H01L21/336
CPCA47G21/14G09F23/08
Inventor 孙容宣秦丞佑李民镛卢径奉
Owner SK HYNIX INC
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap