Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Force sensing device based on microelectromechanical system

A technology of micro-electromechanical systems and devices, applied in the field of force-sensitive devices, can solve problems such as fragile wires and thin strips, complex device structures, and complicated preparation processes, and achieve the effects of improving sensitivity, good repeatability, and improving SI effects

Inactive Publication Date: 2005-11-09
SHANGHAI JIAO TONG UNIV
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the structure of the device is relatively complicated, the preparation process is complicated, the welding and installation of wires and thin strips in the circuit are difficult, and the wires and thin strips are easily broken, etc.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Force sensing device based on microelectromechanical system
  • Force sensing device based on microelectromechanical system
  • Force sensing device based on microelectromechanical system

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The specific structure of the present invention will be further described below in conjunction with the accompanying drawings.

[0026] Such as Figure 1-3 As shown, the present invention is made up of silicon substrate 3, pin 4, zigzagging sandwich structure soft magnetic multilayer film 5 and silicon cantilever beam 6, and pin 4 is drawn from the copper layer 2 at both ends of the force sensitive device, and is arranged on the band SiO 2 On the silicon cantilever beam 6 of the first layer, the soft magnetic multilayer film 5 with a zigzag sandwich structure is located on the silicon cantilever beam 6 , and the silicon cantilever beam 6 is connected with the silicon substrate 3 .

[0027] The meandering sandwich soft magnetic multilayer film 5 is a meandering sandwich structure consisting of a copper layer 2 in the middle and a FeCuNbSiB thin film 1 wrapped around the copper layer 2 . The width of the copper layer 2 is smaller than that of the FeCuNbSiB thin film 1 . ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
widthaaaaaaaaaa
widthaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention relates to a force sensitive component used in microelectromechanical system that includes silicon substrate, pin, flexural sandwich structure soft magnetic multilayer force sensitive component and silicon cantilever. The pin is leading from the copper layer of the two ends of the force sensitive component and is set on the silicon cantilever with silicon dioxide layer. The flexural sandwich structure soft magnetic multiplayer force sensitive component is located on the silicon cantilever that connects to the silicon substrate. The invention has the advantage of high sensitivity and fast response speed. The membrane material could be compatible to most large integrated circuit and is easy to manufacture. The SI effect of the multilayer membrane and sensitivity of the force sensitive component are sharply increased. It could realize the detecting for acceleration, pressure, and libration, and filtering, tuning, surging as well.

Description

technical field [0001] The invention relates to a device in the field of micro-electro-mechanical systems, in particular to a force-sensitive device based on micro-electro-mechanical systems. Background technique [0002] With the rapid development of microelectronics and microelectromechanical systems (MEMS) technology, most of the force-sensitive devices currently on the market are made of resistance strain gauges and silicon piezoresistive diaphragms. The resistance strain gauge is small in size, but the gauge factor is about 2, and the sensitivity is very poor. It needs to be bonded to the elastic body during use, and the temperature stability of the resistance strain gauge is poor, which greatly limits its application range. The piezoresistive sensor based on the semiconductor silicon piezoresistive effect diaphragm structure is the most widely used force sensor at present, and its strain factor is generally around 200. The disadvantage is that the temperature stabilit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G01L9/00
Inventor 周勇陈吉安丁文曹莹周志敏
Owner SHANGHAI JIAO TONG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com