Operating method of the memory

An operation method and memory technology, applied in static memory, read-only memory, information storage, etc., can solve problems such as high power consumption and low programming efficiency, and achieve the effect of preventing large leakage current

Inactive Publication Date: 2012-06-20
MACRONIX INT CO LTD
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Problems solved by technology

[0011] The purpose of the present invention is to overcome the defects of the existing non-volatile memory and its related methods, and provide a new method of operating the memory. The technical problem to be solved is to make it possible to avoid the memory due to the penetrating effect, And cause various problems such as leakage current, high power consumption and low programming efficiency, so it is more suitable for practical use
[0012] Another object of the present invention is to overcome the defects of the existing non-volatile memory and its related methods, and provide a new memory operation method. The technical problem to be solved is to make it possible to avoid effect, resulting in various problems such as leakage current, high power consumption and low programming efficiency, so it is more suitable for practical use

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Embodiment Construction

[0068] In order to further explain the technical means and effects that the present invention adopts to achieve the intended purpose of the invention, below in conjunction with the accompanying drawings and preferred embodiments, the specific implementation methods, methods, steps, features and methods of the memory operation method proposed according to the present invention will be described below. Its effect is described in detail below.

[0069] see Figure 8Shown is a block diagram of a non-volatile memory according to a preferred embodiment of the present invention. The non-volatile memory includes one or more memories 10 and a memory control circuit 20, the memory control circuit 20 is connected to the memory 10, and it is installed to control the operation method of the memory 10, and the above-mentioned operation method includes erasing , programming and reading operations.

[0070] see figure 2 Shown is a schematic cross-sectional view of a non-volatile memory st...

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Abstract

A method of programming the storage comprises setting the storage to an initial state of a first grid threshold voltage, performing a processing sequence including: applying a voltage bias between the grid and the first junction region to cause electric hole to migrate towards and be retained in the trapping layer, and evaluating a read current generated in response to the voltage bias to determine whether a second grid threshold voltage is reached, wherein the second grid threshold voltage is lower than the first grid threshold voltage. The processing sequence is repeated a number of times by varying one or more time the voltage bias between the grid and the first junction region until the second grid threshold voltage is reached and the storage is in a program state.

Description

technical field [0001] The invention relates to a semiconductor memory element, in particular to a non-volatile semiconductor memory storing electrons in an Erase state and an operation method thereof (METHOD FOR OPERATING MEMORY CELL). [0002] The scope of this application is claimed to partially overlap with US Patent Application Serial No. 10 / 113,356, filed March 29, 2002. The aforementioned US Patent Application Serial No. 10 / 113,356 is expressly incorporated herein by reference. Background technique [0003] Memory components for non-volatile information storage (memory is a storage medium, memory, internal memory, hereinafter referred to as memory) components have been widely used, and exemplary non-volatile memory components include read-only memory ( ROM), Programmable Read-Only Memory (PROM), Electronic Programmable Read-Only Memory (EPROM), Electronically Erasable Programmable Read-Only Memory (EEPROM) and Flash Electronic Erasable Programmable Read-Only Memory (...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/82H01L21/8247G11C16/34G11C16/02G11C16/04H01L21/28H01L27/115H01L29/788H01L29/792
CPCH01L29/7923G11C16/3468G11C16/0475H01L29/792H01L21/28273H01L29/40114
Inventor 叶致锴陈宏岳廖意瑛蔡文哲卢道政
Owner MACRONIX INT CO LTD
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