Relative humidity sensor compatible of CMOS process

Abstract

This invention discloses a CMOS craft compatible relative humidity sensor which is used in examining the humidity, by the substrate, taught and influenced the level, under the electric capacity the pole plate, on the electric capacity the pole plate is composed, teaches and influences the level to be located in on the substrate, under the electric capacity the pole plate even shop in taught and influenced on the level, on the electric capacity the pole plate was located thesubstrate and the oxide layer place above: The advantages are simple structure, the temperature drift slightly, strong anti-interference low cost, quickly response and easy detection.

Description

technical field [0001] The invention relates to a relative humidity sensor compatible with a standard CMOS process, in particular to a relative humidity sensor compatible with a CMOS process using air as a humidity sensitive medium. Background technique [0002] The humidity sensor is manufactured based on the physical effect or chemical reaction of its functional materials related to humidity, and it has the function of converting the physical quantity of humidity into an electrical signal. Humidity measurement has important applications in industrial and agricultural production, meteorology, environmental protection, national defense, scientific research, aviation and other departments. As an important part of the humidity measurement system, the humidity sensor has been developed for many years. From the initial hair meter and dry wet bulb humidity sensor to the LiCl electrolyte humidity sensor that can output electrical signals. Electrolyte humi...

AI Technical Summary

Problems solved by technology

Since the aluminum deposition thickness of the standard CMOS process line is generally only 1 to 2 microns, the humidity sensitive capacitance value induced by the side wall is relatively small, which brings difficulties to the detection of subsequent circuits.

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