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Novolak resin mixtures and photosensitive compositions comprising the same

A technology of novolak resin and resin mixture, applied in the directions of diazo compound components, optics, optomechanical equipment, etc., can solve problems such as differential thermal stability

Inactive Publication Date: 2005-07-27
AZ ELECTRONIC MATERIALS (JAPAN) KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Likewise, resins with good resolution have poor thermal stability

Method used

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  • Novolak resin mixtures and photosensitive compositions comprising the same
  • Novolak resin mixtures and photosensitive compositions comprising the same
  • Novolak resin mixtures and photosensitive compositions comprising the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0070] 1 Based on (5:4:2) molar ratio m-cresol / p-cresol / trimethylphenol with the use of AZ  MIF-300 developer (0.261 N tetramethylammonium hydroxide (TMAH), all obtained from AZElectronic Materials, Clariant company) is a novolak resin (unfractionated) of 113 Å / sec; also available Another resin "HPN527" from Clariant instead of "MPT 542" based on p-cresol;

[0071] 2 m-cresol based; novolak resin from AZ Electronic Materials, Clariant Company;

[0072] 3 O-quinonediazide sulfonyl diesters of polyols represented by structure (VIII) in the specification; available from AZ Electronic Materials, Clariant Company;

[0073] 4 Oxyctanoic acid (leveling agent); available from 3M.

[0074] figure 1 is the removed film thickness versus exposure (exposure energy in millijoules / square centimeter (mJ / cm 2 ) graph of the logarithm of the measure). Curve (a) takes formulation A, curve (b) takes formulation B, and curve (c) takes formulation C from Example 1 above. The resin...

Embodiment 2

[0077] 5 Based on m-cresol / p-cresol / trimethylphenol, with use of AZ  MIF-300 developer (0.261 N tetramethylammonium hydroxide (TMAH); obtained from AZ Electronic Materials, Clariant Company) unfractionated novolak resin with a dissolution rate of 550 Å / sec;

[0078] 6 Based on m-cresol, with the use of AZ  MIF-300 developer (from AZ Electronic Materials, Clariant company) when the dissolution rate is the graded novolac resin of 113 Å / sec;

[0079] 7 Based on o-cresol, with the use of AZ  MIF-300 developer (from AZ Electronic Materials, Clariant company) when the dissolution rate is 1017 Å / sec novolac resin (ungraded);

[0080] 8 Photoactive compound sensitizer - o-quinonediazide sulfonyl ester of a polyol represented by structure (VII) in the specification, wherein an average of 2.8 hydroxyl groups are esterified; available from AZ Electronic Materials, Clariant Corporation.

[0081] figure 2 is the removed film thickness versus exposure (exposure energy in ...

Embodiment 3

[0083] The formulations listed in Table 3 below were used to determine the dose to print (DTP) values ​​listed in Table 4.

[0084] Element

E

G

H

I

J

K

L

M

MPT resin - fast 5

1.6

1.6

1.6

1.6

1.6

1.6

--

--

MPT resin - slow 7

--

--

--

--

--

--

1.6

1.6

meta resin - slow 6

0.4

0.4

0.4

0.4

0.4

--

0.4

--

Meta Resin - Fast 8

--

--

--

--

--

0.4

--

0.4

DR 167 9

0.60

--

--

--

--

--

--

--

DR 154 10

--

0.60

--

--

--

--

--

--

DR 153 / 155 11

--

--

0.60

--

--

--

--

--

DR 166 / 168 12

--

--

--

0.60

--

--

--

--

NK 280 13

--

--

--

--

0.60

...

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Abstract

Disclosed is an alkali-soluble, film-forming novolak resin mixture containing at least two novolak resins, each novolak resin containing the addition-condensation reaction product of at least one phenolic compound with at least one aldehyde source, wherein the phenolic compound for first novolak resin contains 90-100 mole % of meta-cresol, and the phenolic compound for the second novolak resin contains less than 50 mole % of meta-cresol. Also disclosed is a photosensitive composition, containing an admixture of: a) the above-mentioned novolak resin mixture; b) at least one o-quinone photoactive compound; and c) at least one photoresist solvent. Also disclosed is a method for producing a microelectronic device by forming an image on a substrate, which involves: a) providing the above-mentioned photosensitive composition; b) thereafter, coating a suitable substrate with the photoresist composition from step a); c) thereafter, heat treating the coated substrate until substantially all of the solvent is removed; image-wise exposing the coated substrate; and then removing the imagewise exposed or, alternatively, the unexposed areas of the coated substrate with a suitable developer.

Description

field of invention [0001] The invention relates to the field of film-forming novolak resin, and to a photosensitive composition containing the novolac resin, and to a method for forming an image on a substrate by using the photosensitive composition. Background of the invention [0002] Photoresist compositions are used in microlithographic processes to manufacture miniaturized electronic components such as those used in the manufacture of computer chips and integrated circuits. Typically in these processes, a thin coating of a photoresist composition is first applied to a substrate, such as a silicon wafer, used to fabricate integrated circuits. The coated substrate is then baked to evaporate any solvent in the photoresist composition and fix the coating to the substrate. The photoresist coated on the substrate is then exposed to image-wise radiation. [0003] Radiation exposure causes chemical transformations in the exposed areas of the coated surface. Visible light, ul...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08K5/08C08L61/06C08L61/08G03F7/023
CPCC08K5/08C08L61/06G03F7/0236C08L2666/16G03F7/023
Inventor J·N·埃尔贝克A·D·迪奥斯
Owner AZ ELECTRONIC MATERIALS (JAPAN) KK
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