Electrodes for RRAM memory cells

Abstract

A RRAM memory cell is formed on a silicon substrate (12) having a operative junction therein and a metal plug (16) formed thereon, includes a first oxidation resistive layer (20); a first refractory metal layer (22); a CMR layer (24); a second refractory metal layer (26); and a second oxidation resistive layer (28). A method of fabricating a multi-layer electrode RRAM memory cell includes preparing a silicon substrate; forming a junction in the substrate taken from the group of junctions consisting of N+ junctions and P+ junctions; depositing a metal plug on the junction; depositing a first oxidation resistant layer on the metal plug; depositing a first refractory metal layer on the first oxidation resistant layer; depositing a CMR layer on the first refractory metal layer; depositing a second refractory metal layer on the CMR layer; depositing a second oxidation resistant layer on the second refractory metal layer; and completing the RRAM memory cell.

Description

technical field [0001] The present invention relates to a thin-film resistive memory device for a nonvolatile memory array, and more particularly to multilayer electrodes of an RRAM memory cell. Background technique [0002] There are currently no commercially available RRAM devices, however, experimental devices using Pt, Au, Ag, Al, Ti, and TiN electrodes have been developed. Pt, An, and Ag electrode devices have good staying power, however, electrodes formed from these materials cannot be etched using conventional integrated circuit etching processes. Experimental devices are fabricated by using shallow mask or chemical mechanical polishing (CMP) processes, which are neither suitable nor cost effective for the fabrication of submicron and large memory devices. While other electrode materials used in experimental devices showed low reliability and low endurance. In Apllied Physics Letters in May 2000, Vol.76, #19, p2749-2751 published "Electrical-pulse-induced reversible...

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Problems solved by technology

[0002] There are currently no commercially available RRAM devices, however, experimental devices using Pt, Au, Ag, Al, Ti, and TiN electrodes have been developed

Pt, An, and Ag electrode devices have good staying power, however, electrodes formed from these materials cannot be etched using conventional integrated circuit etching processes

Experimental devices are fabricated using shallow mask or chemical mechanical polishing (CMP) processes, which are neither suitable nor cost effective for fabrication of submicron and large memory devices

while other electrode materials used in experimental devices showed low reliability and low endurance

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