Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Apparatus for preventing liquid spitting back

A liquid and liquid separation technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as backsplash, photoresist pattern deformation, and lower product qualification rates.

Inactive Publication Date: 2005-01-19
AU OPTRONICS CORP
View PDF0 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the developing solution leaving the glass substrate 100 due to high-speed rotation may bounce back to the glass substrate 100 after colliding with the collecting cover 170, as shown by the arrow 160.
This kind of splashback phenomenon will cause the pattern deformation of photoresist, and produce defect 113 phenomenon, and then reduce the qualified rate of product
In particular, when the glass substrate 100 becomes thinner, the edge of the glass substrate 100 will increase the range of ups and downs, which will make the splash back more serious.
[0006] Therefore, even if the developing conditions such as developing time, developer concentration and temperature are properly controlled, if there is any negligence during the final spin-drying process, the accuracy of the pattern transferred to the photoresist layer will still be reduced

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Apparatus for preventing liquid spitting back
  • Apparatus for preventing liquid spitting back
  • Apparatus for preventing liquid spitting back

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0011] The invention provides a device for preventing the developing solution from splashing back to the glass substrate in the developing process.

[0012] Please refer to Figure 2a , firstly, a glass substrate 200 is provided on a spinner 230 . The glass substrate 200 has been coated with a photoresist layer 210 mainly composed of a resin, a photosensitive agent and a solvent, wherein the function of the resin is as a binder, and the photosensitive agent is a kind of photoactivity (photoactivity). Very strong compound.

[0013] After a photoresist layer with an appropriate thickness is covered on the glass substrate 200, the glass substrate 200 will go through a soft bake (soft bake) process, so that the solvent in the photoresist is evaporated by heating. Drain to increase the adhesion of the photoresist to the surface of the glass substrate. Next, a patterned photomask is used as a mask to expose the glass substrate 200 to light, so that the photoresist layer 210 has a...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

This invention provides an apparatus to prevent the liquid splash back to the object and especially relates to the apparatus used in the image-forming process. It at least comprises: a spinner with the object located on and to separate the object and liquid by use of the spinner; a side wall around the spinner to prevent the water splash out the side wall; and a buffer cotton attached into the inside of the side wall to prevent the water plash to the object through side wall.

Description

technical field [0001] The invention relates to a device for preventing liquid from splashing back, in particular to a device for preventing back-splashing applied in a developing manufacturing process. Background technique [0002] In the semiconductor manufacturing process, to form a pattern in a film, it is usually necessary to form a photoresist layer on the film first, and then use a photomask with a pattern as a shield to expose the photoresist layer . At this time, photochemical transformation (photochemical transformation) reaction will occur in the area irradiated by light. [0003] Next, a development step is performed to reveal the potential pattern transferred from the photoresist layer, and the developed pattern is the basis for subsequent etching of the thin film layer. Therefore, the developing conditions must be strictly controlled to prevent the unexposed photoresist layer from being attacked by the developing solution, thereby affecting the accuracy of th...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/26G03F7/30H01L21/027
Inventor 曾士庭钟昱正郭丁瑞
Owner AU OPTRONICS CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products