Thermally driven in-situ test structure of transverse breaking strength of film in microelectronic mechanical system
A technology of microelectronic machinery and transverse fracture, applied in the direction of strength characteristics, using stable tension/pressure testing material strength, measuring devices, etc., can solve the problem that the accuracy of measurement is greatly affected, the reading is troublesome, and it is easy to be interfered by external factors and other problems, to achieve the effect of high measurement accuracy, simple test and low voltage
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[0011] specific implementation plan
[0012] The specific structure of the embodiment of the present invention will be further described below in conjunction with the accompanying drawings:
[0013] figure 1 It is a three-dimensional schematic diagram of the test structure for measuring tensile breaking strength. On a silicon substrate material, a microelectronic processing technology is used to fabricate a device such as figure 1 In the shown structure, the beam 102 to be tested is 10 microns long and 2 microns wide, one end is connected to the fixed end 101, the other end is connected to the beam 103, and the two sides of the beam 103 are connected to the V-shaped thermal actuator heating beam 104, each There are 4 heating beams with a width of 5 microns and a length of 300 microns; the other ends of the heating beams are respectively connected to the fixed end 105 of the heating beam; the fixed ends 101 and 105 are fixed on the upper plane of the si...
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