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Cleaning method for mfg. appts. of semiconductor device

A technology for manufacturing equipment and semiconductors, applied in semiconductor/solid-state device manufacturing, cleaning methods and appliances, chemical instruments and methods, etc., can solve the problem that the cleaning effect of cleaning gas is not as good as that of NF3, and achieve improved cleaning effect and cleaning efficiency Effect

Inactive Publication Date: 2004-08-11
JUSUNG ENG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] While other cleaning gases can be used, they do not clean as well as NF 3 cleaning effect

Method used

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  • Cleaning method for mfg. appts. of semiconductor device
  • Cleaning method for mfg. appts. of semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0039] figure 1 It is a schematic diagram of equipment using the cleaning method of the manufacturing equipment of the semiconductor device according to the first embodiment of the present invention. According to the first embodiment of the present invention, the cleaning gas is activated using a remote plasma generator 70 outside the processing chamber 10 . One end of the remote plasma generator 70 is connected to a radio frequency (RF) power source 20, and the other end of the remote plasma generator 70 is grounded. A gas inlet (not shown) is connected to a remote plasma generator 70 . The plasma generated by the remote plasma generator 70 flows into the processing chamber 10 through the plasma inlet 31 . The substrate rack 16 is disposed in the processing chamber 10, and the exhaust pipe 32 is connected to the processing chamber 10 for removing residues generated during the cleaning process. The exhaust pipe 32 is also connected to the booster pump 34 and the dry pump 36...

no. 2 example

[0050] According to the second embodiment, for figure 1 The remote plasma generator 70 applies an RF source of approximately 800 watts to generate plasma, and will figure 1 The pressure of the processing chamber 10 was maintained at 400 mTorr. The other conditions of the second embodiment are exactly the same as those of the first embodiment, and the same equipment as the first embodiment is also used. In addition, samples for measuring the cleaning speed of the processing chamber were placed at three places, namely, the center of the substrate holder 16 , the side wall of the processing chamber 10 , and the front wall of the processing chamber 10 .

[0051] C 4 f 8 O is the fluorocarbon gas contained in the first cleaning gas, and N 2 O or NO is the second cleaning gas. Set the flow rate to about 40sccm C 4 f 8 O with a flow rate of about 180 sccm of O 2 into the remote plasma generator 70. No second purge gas but only C 4 f 8 O / O 2 The cleaning speed is about 118...

no. 3 example

[0056] According to a third embodiment, the RF source for generating the plasma is 300 watts and the chamber pressure is 400 mTorr. A third embodiment is a capacitively coupled plasma (CCP) system.

[0057] Silicon nitride (5 cm x 5 cm) was formed on a silicon chip as a sample for measuring the cleaning speed of the process chamber. C 4 f 8 O is the fluorocarbon gas contained in the first cleaning gas, and N 2 is the second cleaning gas. Set the flow rate to 16sccm C 4 f 8 O with a flow rate of 64 sccm O 2 supplied to the processing chamber. The cleaning speed when the second cleaning gas is not used is about 507.7 nm / min, and the DRE and MMTCE are 98.38% and 3.58×10 -9 .

[0058] Introduce N as the second cleaning gas with a flow ratio of 0.05 to 0.20 to the first cleaning gas 2 , wherein the total flow rate of the first cleaning gas is 80 sccm, and the cleaning speed, DRE and MMTCE values ​​at various flow ratios are measured.

[0059] Will N 2 added to C 4 f 8...

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Abstract

A cleaning method of an apparatus for manufacturing a semiconductor device includes providing a first cleaning gas and a second cleaning gas into a chamber, and forming a mixture of the first cleaning gas and the second cleaning gas, wherein the first cleaning gas includes a fluorocarbon gas and an oxygen gas and the second cleaning gas includes nitrogen, activating the mixture of the first cleaning gas and the second cleaning gas by a high frequency power, and exhausting residues cleaned by the activated mixture and remaining gases.

Description

technical field [0001] The invention relates to a cleaning method for semiconductor device manufacturing equipment, in particular to a cleaning method for thin film deposition equipment. [0002] This application claims priority to Application No. 2003-05789 filed in Korea on Jan. 29, 2003, which is hereby incorporated by reference. Background technique [0003] In general, thin films of semiconductor devices can be formed by various methods, such as chemical vapor deposition (CVD) methods. After depositing each layer of thin film, it is necessary to clean the processing chamber of the thin film deposition equipment in order to remove the source gas and residue remaining in the inner wall and interior of the processing chamber. [0004] such as CF 4 、C 2 f 6 、C 3 f 8 、C 4 f 8 and SF 6 High fluorine compound (PFC) gas is usually used to remove silicon, silicon oxide (SiO x ) or silicon nitride (SiN x ) clean gas. However, when the PFC gas is used to clean the proc...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/205B08B7/00C23C16/44
CPCC23C16/4405B08B7/0035Y02C20/30B08B7/00
Inventor 尹守植廉根永李来应金基俊吴昌铉金知晃
Owner JUSUNG ENG
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