Ceramic laminated body and its manufacturing method

A manufacturing method and a technology for a laminated body, which can be applied to ceramic layered products, laminated capacitors, chemical instruments and methods, etc., and can solve problems such as metal film breakage.

Inactive Publication Date: 2004-05-19
PANASONIC CORP
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, there is a problem that the metal film produced by the thin film formation method is transferred and the ceramic green board has many layers laminated together for sintering, and the metal film breaks after sintering.
This problem is more serious when the thickness of the metal film is thinner.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Ceramic laminated body and its manufacturing method
  • Ceramic laminated body and its manufacturing method
  • Ceramic laminated body and its manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] A ceramic laminate is produced through the following steps (1) to (6).

[0055] (1) Corresponding to the internal electrode pattern, a metal thin film is formed by a vacuum process on the support film subjected to mold release treatment (metal thin film forming step).

[0056] (2) Forming a ceramic green board on a carrier film (ceramic green board formation process).

[0057] (3) On the ceramic green sheet obtained in the above (2), an adhesive is applied corresponding to the internal electrode pattern (adhesive application process).

[0058] (4) The thin metal film formed on the support film obtained in (1) above is pressed onto the ceramic green sheet obtained in (3) above. In this way, only the portion of the metal thin film corresponding to the internal electrode pattern is transferred onto the ceramic green board (metal thin film transfer process).

[0059] (5) The ceramic green sheet on which the metal thin film was transferred obtained in the above (4) is pres...

Embodiment 1-b

[0075] ●Example 1-b (alloy sputtering with Ni-Ba alloy as target)

[0076] An RF magnetron sputtering facility (13.56 MHz, 2 KW) in which the first thin film formation source 121 uses a Ni-Ba alloy as a target was used. The second thin film forming source 122 was not used. The barrel roll 110 was cooled so that the temperature of the support film 102 reached 10°C. The transport speed of the support film 102 was 3 nm / sec. In this manner, a metal thin film containing Ni and Ba and having a thickness of 0.6 μm was formed on the support film 102 .

[0077] Ni-Ba alloys with Ba composition ratios of 0, 1, 5, 10, 30, and 49 atm% were used as targets, and the composition ratios of Ni and Ba in the metal thin film were changed. The composition ratio was confirmed by ICP emission spectroscopic analysis. In either case, a metal thin film having a composition ratio substantially the same as that of the target was obtained.

[0078] As the support film 102, a PET sheet subjected to t...

Embodiment 1-c

[0079] ●Example 1-c (2-source sputtering with Ni and Ti as targets)

[0080]A DC sputtering facility in which the first thin film formation source 121 uses Ti as a target was used. Furthermore, a DC sputtering facility in which the second thin film formation source 122 uses Ni as a target was used. The barrel roll 110 was cooled so that the temperature of the support film 102 reached 10°C. In this way, a metal thin film containing Ni and Ti with a thickness of 0.8 μm was formed on the support film 102 .

[0081] Along the moving direction of the support film 102, a Ti sputtering device 121 is arranged on the upstream side, and a Ni sputtering device 122 is arranged on the downstream side, so that the metal thin film composed of Ni and Ti formed on the support film 102 , the closer to the support film 102 side, the larger the Ti content, and the closer to the opposite side, the larger the Ni content. Auger electron spectroscopic analysis was performed on the obtained metal t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

A ceramic layered product 10 includes a plurality of ceramic layers 12 including a metallic element and a plurality of metal layers 14a, 14b, each of which is arranged between the ceramic layers 12. The metallic layers 14a, 14b include at least one element selected from the group consisting of Ni, Cu, Ag, and Pd in a total content of not less than 50 atm % as a main component, and at least one element selected from the metallic elements of the ceramic layers 12 in a content of not less than 1 atm % and less than 50 atm % as an additive component. This ceramic layered product can be less susceptible to fracture in the metal layers caused by firing.

Description

technical field [0001] The present invention relates to a ceramic laminate and its manufacturing method. Background technique [0002] Ceramic capacitors in which ceramic layers as dielectric layers and internal electrode layers are laminated alternately only in required numbers have been widely used. [0003] The manufacturing method of this kind of ceramic capacitor is known as printing and coating a conductive paste as an internal electrode layer on a ceramic green sheet, and then stacking many green sheets together for sintering. [0004] In this regard, as a method of forming the internal electrode layer, a method is being developed to form a metal thin film on a support film by a thin film formation method such as evaporation deposition, and transfer the metal thin film to a ceramic green sheet. According to this method, the thickness of the internal electrode layer can be greatly reduced compared with the method of forming the internal electrode layer by printing and...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): B32B3/00B32B15/04C04B35/468C04B37/02C23C14/00C23C16/00H01B1/00H01G4/008H01G4/012H01G4/06H01G4/12H01G4/30
CPCC04B35/645C04B35/63C04B35/63404C04B35/634C04B37/028C04B2237/592B32B2311/12Y10T428/24926H01G4/008C04B2237/708C04B2237/405C04B35/63476C04B2237/68C04B2237/56C04B2237/346B32B2311/22Y10T428/24917B32B2311/09B32B2311/08C04B35/6342C04B2237/408H01G4/30C04B2237/40C04B2237/407C04B35/468B32B18/00C04B2237/706H01G4/012B32B2309/022C04B2237/12
Inventor 本田和义高井顺子长井淳夫村尾正子小林惠治
Owner PANASONIC CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products