Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Capacitor, semiconductor device and its manufacture method, electrooptical device and electronic machine

A manufacturing method, semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, fixed capacitor dielectrics, etc., can solve the problems of not being able to use glass, deprivation of freedom, and not being able to form aluminum wiring, etc., to achieve high withstand voltage and uniformity sex high effect

Inactive Publication Date: 2003-03-26
SEIKO EPSON CORP
View PDF0 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Here, although the tantalum oxide film has the advantage of high dielectric constant, in order to form the tantalum oxide film by anodic oxidation, it is necessary to form the wiring for power feeding when anodic oxidation is performed, so semiconductors such as TFTs are formed on the same substrate. In the installation, the degree of freedom in its design is greatly deprived
In addition, although a tantalum oxide film can also be obtained by thermally oxidizing a tantalum film under normal pressure in the atmosphere, the withstand voltage of such a tantalum oxide film is low.
[0005] In addition, in the method of forming an insulating film at a high temperature exceeding 1000° C., an inexpensive substrate such as glass cannot be used as a substrate.
[0006] In addition, when aluminum wiring is formed on the substrate, the heat resistance of the aluminum wiring is deteriorated at a processing temperature exceeding 1000° C. Therefore, when processing at such a high temperature, the aluminum wiring cannot be formed.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Capacitor, semiconductor device and its manufacture method, electrooptical device and electronic machine
  • Capacitor, semiconductor device and its manufacture method, electrooptical device and electronic machine
  • Capacitor, semiconductor device and its manufacture method, electrooptical device and electronic machine

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0072] figure 1 (A) and (B) are cross-sectional views schematically showing the structures of the semiconductor devices of Embodiment 1 and its modification of the present invention, respectively.

[0073] exist figure 1 In (A), in the semiconductor device 300A of this embodiment, a capacitor 600 having a lower electrode 320 made of a tantalum film as a dielectric and other semiconductor elements (not shown) are formed on a substrate 310. An insulating layer 330 of the first layer and an upper electrode 350 made of a silicon film or a metal film doped with impurities.

[0074] Here, the entire lower electrode 320 is made of a tantalum film, and the insulating layer 330 is made of a tantalum oxide film 331 obtained by oxidizing the surface of the tantalum film.

[0075] When manufacturing the semiconductor device 300A having such a structure, in the present embodiment, after the tantalum film (metal film for insulating layer formation) is formed on the substrate 310, the surf...

Embodiment 2

[0080] figure 2 (A) and (B) are cross-sectional views schematically showing the structures of semiconductor devices according to Embodiment 2 and its modification of the present invention, respectively.

[0081] exist figure 2 In (A), in the semiconductor device 300B of the present embodiment, a capacitor 600 having a lower electrode 320, an insulating layer 330 as a dielectric layer, and other semiconductor elements (not shown) are formed on a substrate 310. and an upper electrode 350 made of a silicon film or a metal film doped with impurities.

[0082] Here, the lower electrode 320 is composed of a lower electrode layer 321 and an upper electrode layer 322, the lower electrode layer 321 is composed of a metal film such as an aluminum film, a chromium film, or a silicon film doped with impurities, and the upper electrode layer 322 is composed of The upper layer side of the lower layer side electrode layer 321 is composed of a tantalum film layered thereon.

[0083] When...

Embodiment 3

[0088] image 3 (A) and (B) are cross-sectional views schematically showing the structures of semiconductor devices according to Embodiment 3 and its modifications of the present invention, respectively.

[0089] exist image 3 In (A), in the semiconductor 300C of the present embodiment, a capacitor 600 having a lower electrode 320, an insulating layer 330 as a dielectric layer, and other semiconductor elements (not shown) are formed on a substrate 310. The upper electrode 350 is formed of a silicon film or a metal film doped with impurities.

[0090] Here, the lower electrode 320 is a silicon film or a metal film doped with impurities, and the insulating layer 330 is composed of a tantalum oxide film 331 obtained by oxidizing a tantalum film.

[0091] When manufacturing the semiconductor device 300C having such a structure, in this embodiment, after the lower electrode 320 is formed on the substrate 310, a tantalum film (metal film for forming an insulating layer) is formed...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A semiconductor device includes a TFT, a diode and a capacitor each having an insulating layer which includes a tantalum oxide film formed by oxidizing a tantalum film at a temperature of 300 DEG C to 400 DEG C and under a pressure of 0.5 MPa to 2 MPa, and a silicon oxide film formed by a CVD method and the like. Therefore, the insulating layer includes the tantalum oxide film produced by high-pressure annealing and thus has high voltage resistance.

Description

technical field [0001] The present invention relates to a capacitor, a semiconductor device having a capacitor or an MIS (Metal-Inslator-Semiconductor) semiconductor element, an electro-optical device using the semiconductor device as an active matrix substrate, a method for manufacturing a capacitor, a method for manufacturing a semiconductor device, and an electronic device . In addition, in detail, it relates to the formation technology of the insulating layer used for electric components. Background technique [0002] In various semiconductor devices, when a capacitor is formed on a substrate, generally, a bottom electrode, an insulating layer as a dielectric layer, and an upper electrode are stacked in this order. Here, a silicon oxide film or a tantalum oxide film is used for the insulating layer. In such an oxide film, in order to form a high-voltage resistant silicon oxide film, a method of thermally oxidizing the silicon film at a temperature of about 1000° C. to ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L27/02G02F1/1365H01L21/02H01L21/316H01L21/336H01L21/77H01L21/84H01L27/12H01L27/13H01L29/49H01L29/786
CPCH01L21/02244H01L28/56H01L29/66765H01L21/31612H01L21/02255H01L21/02271H01L27/1255H01L21/31683H01L21/02164H01L29/66757H01L27/1214H01L27/13H01L29/4908H01L21/02183G02F1/136213H01L27/12H01L21/022H01L29/78621H01L27/02
Inventor 渡边吉祥
Owner SEIKO EPSON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com