Crystal film and its preparartion, and element, circuit and device therewith

A thin film and crystal technology, applied in circuits, transistors, crystal growth and other directions, can solve the problems of difficult control of the position of the crystal grain formation, difficult and unimplementable flattening of the oxide film by fine processing of the underlying substrate, etc.

Inactive Publication Date: 2003-01-15
CANON KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this possibility has not been proven, and the range of optimal conditions is very small
Moreover, this method uses a highly thermally conductive underlying substrate, so it is not suitable for methods using glass substrates
Furthermore, fine machining of the underlying substrate and flattening of the oxide film in large areas is not easy and impractical
[0010] As mentioned above, in the process of forming a crystalline thin film by the melting-resolidification method, the position of crystal grain formation is not easy to control
However, this method is expected to improve the properties of the films, since the thin crystalline films formed by the melting-resolidification process have a low density of defects in the grains (compared to films made by other film formation methods)

Method used

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  • Crystal film and its preparartion, and element, circuit and device therewith
  • Crystal film and its preparartion, and element, circuit and device therewith
  • Crystal film and its preparartion, and element, circuit and device therewith

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0088] Depend on Figures 1A to 1H A crystalline silicon thin film formed by the method shown in is described as Example 1 of the present invention.

[0089] An amorphous silicon film containing crystalline silicon clusters was formed to a thickness of 50 nm by vapor deposition on a substrate composed of silicon dioxide and other components and having an amorphous surface. This amorphous silicon film containing crystalline silicon clusters was irradiated with an energy beam from the surface side (locally excluding a small area of ​​1 μm diameter), thereby partially amorphizing the crystalline silicon clusters in the irradiated area of ​​the film. The obtained film was used as a starting film.

[0090] This initial film was treated with a KrF excimer laser beam at approximately 200 mJ / cm 2 The energy density is irradiated for 30 nanoseconds to melt and resolidify to obtain a crystal thin film.

[0091] The crystal grain shape of the formed crystal thin film was examined. As...

Embodiment 2

[0095] Depend on Figures 1A to 1H Another crystalline silicon thin film formed by the method shown in is described as Example 2 of the present invention.

[0096] In the same manner as in Example 1, an amorphous silicon film containing crystalline silicon clusters was formed to a thickness of 50 nm by vapor deposition on a substrate mainly composed of silicon dioxide and having an amorphous surface. This amorphous silicon thin film containing crystalline silicon clusters was irradiated with an energy beam from the surface side (partially excluding a small area of ​​0.7 µm in diameter), thereby obtaining a starting thin film. In this example, unlike Example 1, the crystalline silicon clusters contained in the thin film become completely amorphous in the region where the energy beam is irradiated.

[0097] This starting film was treated with an ArF excimer laser beam at approximately 210 mJ / cm 2 The energy density is irradiated for 30 nanoseconds to melt and resolidify to obt...

Embodiment 3

[0102] Depend on Figures 1A to 1H The third crystalline silicon film formed by the method shown in

[0103] Embodiment 3 is described.

[0104] A polysilicon film having a thickness of 80 nm was formed as a starting film on a substrate having an amorphous surface composed of an inorganic silicon compound by vapor deposition. Deposition of the initial film by means of selective deposition, at about 2 μm 2 Average diameters of about 300 nm were obtained in small regions of , and about 100 nm in other regions in the plane of the film.

[0105] This starting film was treated with a XeCl excimer laser beam at approximately 300 mJ / cm 2 The energy density is irradiated for 40 nanoseconds to melt and resolidify to obtain a crystal thin film.

[0106] The crystal grain shape of the formed crystal thin film was examined. found that single grains have been centered at about 2µm 2 The above-mentioned small regions grow around to a particle size of about 3 μm in diameter. The surro...

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Abstract

A process for producing a crystalline thin film is provided which comprises melting and resolidifying a starting thin film having regions different in the state coexisting continuously. A small region of the starting thin film has a size distribution of number concentration of crystal grains or crystalline clusters different from that of the surrounding region. In the process of melting and resolidification, the crystal grain grows preferentially in the one region to control the location of the crystal grain in the crystalline thin film.

Description

field of invention [0001] The present invention relates to a crystal thin film and a method of manufacturing it, a component using the crystal thin film, a circuit using the component, and a device using the component or circuit, which can be used for large-scale integrated circuits requiring high spatial uniformity such as flat panel displays, images sensors, magnetic recording devices, and information / signal processors. Background technique [0002] Flat panel displays such as liquid crystal displays have been improved in fineness, display speed, and gradation of image display by monolithically mounting an image driving circuit on a panel. Simple matrix driven panels have been replaced by active matrix driven panels with switching transistors for each pixel. Currently, ultra-fine full-color liquid crystal displays are provided, and the active matrix is ​​driven by switching resistor circuits running on the periphery of the same panel, making the display suitable for movin...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02F1/1368C23C26/02C30B13/00C30B13/22G02F1/1333H01L21/20H01L21/336H01L29/786H01L39/24
CPCC30B29/06H01L21/2022C30B13/22C23C26/02H01L21/02686H01L21/02422H01L21/02532H01L21/02672H01L21/02595G02F1/1333H01L21/02667
Inventor 云见日出也水谷英正近藤茂树
Owner CANON KK
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