Method for producing grey mask

A technology of gray-tone mask and manufacturing method, which is applied in the photoengraving process of the pattern surface, the manufacture of semiconductor/solid-state devices, the original for opto-mechanical processing, etc. Calibrate offsets, reduce time, ensure quality results

Inactive Publication Date: 2006-11-08
HOYA CORP
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, even with this method, although there is a difference in the degree of offset compared to the previous method, it cannot solve the problem of graphic offset

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Method for producing grey mask
  • Method for producing grey mask
  • Method for producing grey mask

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0038] Embodiments of the present invention will be described in detail below.

[0039] figure 1 It shows the first embodiment of the manufacturing method of the gray tone mask of this invention, and is a schematic cross-sectional view showing the manufacturing process in order of process.

[0040] The mask blank used in this embodiment is as figure 1 As shown in (a), a light semitransmissive film 22 and a light shielding film 23 are sequentially formed on a transparent substrate 21 such as quartz. Here, as the material of the light-shielding film 23, a thin film and a material capable of obtaining high light-shielding properties are preferable, and examples thereof include Cr, Si, W, Al, and the like. In addition, as the material of the semi-transmissive film 22, a thin film is preferred and a semi-transmissive material with a transmittance of about 50% can be obtained when the transmittance of the light-shielding portion is 0%. For example, Cr compounds (Cr oxides, nitr...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

An object of the present invention is to provide a method for manufacturing a gray tone mask in halftone film type being capable of manufacturing TFT in high quality. Means of achieving the above object is a method comprising the steps of preparing a mask blank having a translucent film (22) and a light-shielding film (23) sequentially formed on a transparent substrate (21), forming a resist film onto said mask blank and exposing the resist film, which includes exposing a partition forming a translucent part to a pattern below resolution limit of a exposing device for pattern-exposing on said resist film, carrying out development to form a resist pattern (24a) which is different in film residue value between a partition forming light-shielding part and a partition forming translucent part, forming a transparent part by etching the light-shielding film (23) and translucent film (22) with said resist pattern (24a) as a mask, removing only resist pattern remained on the translucent part, and forming a translucent part by etching light-shielding film (23a) with remained resist pattern as a mask.

Description

technical field [0001] The present invention relates to a method for manufacturing a graytone mask (graytonemask) suitable for manufacturing a thin film transistor liquid crystal display (Thin Film Transistor Liquid Crystal Display: hereinafter referred to as TFT-LCD). Background technique [0002] Compared with CRT (cathode ray tube), TFT-LCD has the advantages of easy thinning and low power consumption, so it is currently being commercialized rapidly. TFT-LCD has a TFT substrate with a structure in which TFTs are arranged in each pixel arranged in a matrix, and a color filter in which red, green, and blue pixel patterns are superimposed and arranged corresponding to each pixel through a liquid crystal phase. . In the TFT-LCD, the number of manufacturing steps is large, and it is necessary to use 5 to 6 photomasks even to manufacture the TFT substrate. [0003] Under such circumstances, a method of manufacturing a TFT substrate using four photomasks has been proposed (for...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): G03F1/14G03F7/20H01L21/00G03F1/68G03F1/80H01L21/027
CPCG02F1/1335G03F1/32G03F1/34G03F1/50G03F1/54G03F1/80
Inventor 井村和久
Owner HOYA CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap