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P-ZnO thin film and preparation thereof

A thin film, p-zno technology, applied in semiconductor/solid-state device manufacturing, ion implantation plating, coating, etc., can solve the problem of poor uniformity of ZnO surface particles, unsatisfactory doping effect, unsatisfactory doping effect, etc. problem, to achieve the effect of rich raw materials, low price and low production cost

Inactive Publication Date: 2006-10-04
ZHEJIANG UNIV
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Problems solved by technology

The latter two acceptor levels are relatively deep, the doping effect is not ideal, and both As and P are toxic
The active N source in the first type generally comes from NH 3 , N 2 or N 2 O, but when N atoms replace O atoms, the Madelung energy is increased, which causes the localization of the N energy level, the N energy level is deep, and the doping effect is not very ideal
The second type of donor (Ga) and acceptor (N) co-doping technology results in poor uniformity of ZnO surface particles, and the use of a higher-priced Ga source, usually using (MBE) molecular beam epitaxy process, expensive equipment , high production cost

Method used

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  • P-ZnO thin film and preparation thereof
  • P-ZnO thin film and preparation thereof
  • P-ZnO thin film and preparation thereof

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Embodiment Construction

[0014] Refer to the following figure 1 , the preparation method of the p-ZnO thin film of the present invention is further illustrated by examples. First, the substrate is surface-cleaned and placed on the sample holder 5 in the reaction chamber. The substrate to be deposited is placed facing down to effectively prevent granular impurities from contaminating the substrate. The vacuum degree of the reaction chamber is pumped to 1×10 -3 Pa, use a heater to heat the substrate, and the substrate temperature is controlled at 550°C; the sputtering gas is NH 3 (above 99.99%) and O 2 (more than 99.99%), the two-way gas enters the buffer chamber 4 through the inlet pipe 1 and 2, and is introduced into the vacuum chamber after the buffer chamber is fully mixed. The pressure in the vacuum chamber is controlled by the automatic pressure controller 8, and the pressure is 3Pa. NH 3 with O 2 The partial pressure ratio can be adjusted through the flow meter 3 according to the doping requi...

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Abstract

The P-ZnO film of this invention is the codoped p-ZnO film by using N as the acceptor doping source and Al as the donor doping source with doping concentration of 1.8X10 to the power 15 cm-3 - 4.5X10 to the power 18 cm-3. The preparation method for it is to use magnetic control sputtering method by using ZnxAl1-x as target material (1>x>0.6) and the doping concentration can be controlled by regulating the different differential pressure ratio of N gas and high purified O2 or Ar to be inputted as well as by regulating the Al content in the target material so that the good stability and controllability can be obtained for the doping concentration.

Description

technical field [0001] The invention relates to a semiconductor device, in particular to a p-ZnO thin film and a preparation method thereof. Background technique [0002] Due to the existence of many intrinsic donor defects in ZnO, such as interstitial zinc Zn i and oxygen vacancies V 0 , whose energy levels are respectively located at the bottom of the conduction band at 0.05eV and 0.3eV, and have a highly self-compensating effect on the acceptor. Therefore, it is difficult to realize the p-type transformation of ZnO, and the acceptor energy level of ZnO is generally very deep (except N), the holes are not easy to be thermally excited into the valence band, and the solid solubility of acceptor doping is also very low. Controllable and stable p-type doping has always been an important topic in ZnO research. At present, there are four main channels for p-type doping reported in the literature: 1. N doping 2. Ga, N co-doping 3. As doping 4. P dopin...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/203C23C14/08C23C14/34
Inventor 叶志镇袁国栋黄靖云曾昱嘉赵炳辉
Owner ZHEJIANG UNIV
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