Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Supersolution structure cntg. non-linear mask layer

A mask layer, non-linear technology, applied in the field of optical storage, achieves the effects of simple film structure, simple process and low production cost

Inactive Publication Date: 2006-08-16
SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The problem to be solved by the present invention is to effectively improve the defects and difficulties of the above-mentioned prior art, and propose a "super-resolution structure containing a nonlinear mask layer" to solve the problem of achieving a spot size smaller than the read-out spot size in a read-only optical disc. The readout of recording points (super-resolution recording points), and the signal-to-noise ratio is very high, the readout cycle is good, and it can basically be practical

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Supersolution structure cntg. non-linear mask layer
  • Supersolution structure cntg. non-linear mask layer
  • Supersolution structure cntg. non-linear mask layer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] The present invention and its effects will be further described below in conjunction with examples.

[0022] The present invention contains the super-resolution structure of the nonlinear mask layer such as figure 1 As shown, it includes a protection layer 1 , a nonlinear mask layer 2 and a protection layer 3 . The protective layer 1 and the protective layer 3 are used to prevent the non-linear mask layer 2 from being damaged or oxidized by reading heat, and the non-linear mask layer 2 is used for reading out information recording points smaller than the diffraction limit.

[0023] Protective layer 1 and protective layer 3 in the mask of the present invention are all made up of zinc sulfide with a thickness of 30nm: the composite material of silicon dioxide=80:20; (Ag 11 In 12 Sb 51 Te 26 ) Composite film composition. The protection layer 1, the nonlinear mask layer 2 and the protection layer 3 jointly form a super-resolution structure 4, see figure 2 .

[0024...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
wavelengthaaaaaaaaaa
Login to View More

Abstract

The disclosed structure suitable to CD ROM is composed of protection layer, non-linear reflective coating and protection layer. Characters are that the protection layer is made from composite material with proportioning as zinc sulfate : silicon dioxide = 80:20. Non-linear reflective coating layer is made from composite material with proportioning as argentine, indium, stibium and tellurium (Ag11In12Sb51Te26). Features are super resolution and high S / N larger than 40dB.

Description

Technical field: [0001] The invention belongs to the technical field of optical storage, and relates to a super-resolution structure with a nonlinear mask layer. Background technique: [0002] The rapid development of information technology requires that the devices used for information storage must have ultra-high storage density and ultra-fast access rate, which requires that the size of the recording spot of the optical disc used for information storage is getting smaller and smaller. However, as the size of the recording point decreases, the spot size required for reading the recording point also decreases accordingly. It is difficult to read such a small recording point with the existing optical system, because the size of the recording point is smaller than the readout The resolution of the spot, the signal of multiple recording points will appear in the spot, which requires the use of short-wavelength laser and high numerical aperture optical head, but due to the diff...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G11B7/24G11B7/2433
Inventor 张锋施宏仁徐文东王阳杨金涛高秀敏周飞干福熹
Owner SHANGHAI INST OF OPTICS & FINE MECHANICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com