Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Novel balanced Schottky frequency doubling structure and use method thereof

A Schottky diode, balanced technology, applied in the direction of power oscillators, electrical components, etc., can solve the problems of limiting the number of channels, transmission loss frequency doubling efficiency attenuation, reducing synthesis efficiency, etc., to achieve high frequency doubling efficiency and frequency doubling efficiency and the effect of high maximum output power and low parasitic loss

Pending Publication Date: 2022-07-29
INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
View PDF0 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This multi-channel synthesis expansion method will introduce redundant peripheral synthesis networks, and its transmission loss will greatly attenuate the overall frequency multiplication efficiency of the circuit; in addition, the more channels, the more assembly times in different time and space, As a result, the inconsistency between the amplitude and phase of each channel will be more obvious, further reducing the synthesis efficiency. Assuming that the binary synthesis form is adopted, the dual-channel synthesis efficiency due to transmission loss and assembly inconsistency is γ (less than 1), then 2N channels The frequency multiplier efficiency of the synthesis circuit will drop to γ ​​of the efficiency of the single frequency multiplier circuit N times, which means that as the number of channels increases, the attenuation value of the efficiency will become larger and larger, which also limits the maximum number of synthesized channels

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Novel balanced Schottky frequency doubling structure and use method thereof
  • Novel balanced Schottky frequency doubling structure and use method thereof
  • Novel balanced Schottky frequency doubling structure and use method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0040] Those of ordinary skill in the art will appreciate that the embodiments described herein are intended to assist readers in understanding the principles of the present invention, and it should be understood that the scope of protection of the present invention is not limited to such specific statements and embodiments. Those skilled in the art can make various other specific modifications and combinations without departing from the essence of the present invention according to the technical teaching disclosed in the present invention, and these modifications and combinations still fall within the protection scope of the present invention.

[0041] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments.

[0042] such as Figure 4 The shown novel balanced Schottky frequency doubler structure includes: an input waveguide directional coupler 1, a Schottky diode pair 2, a DC feeding network 3 and a three-po...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a novel balanced Schottky frequency doubling structure and a use method thereof. The structure comprises an input waveguide directional coupler, two Schottky diode pairs, two direct current feed networks and a three-port differential output probe, wherein the input waveguide directional coupler can provide two paths of input signals with equal amplitude and 90-degree phase difference for a circuit; the Schottky diode pairs are symmetrically arranged in a mirror image manner; the frequency doubling structure disclosed by the invention can realize intrinsic suppression of odd harmonics and 2N harmonics (N is an even number), the structure has the advantages of high efficiency, relatively wide bandwidth, high circuit integration level and small parasitic loss, and the power capacity and the frequency doubling efficiency of the structure are improved compared with those of an existing balanced Schottky frequency doubling structure.

Description

technical field [0001] The invention belongs to the technical field of frequency multipliers, and in particular relates to a novel balanced Schottky double frequency structure and a method for using the same. Background technique [0002] Schottky diode-based terahertz frequency doubling sources have become critical devices in various submillimeter wave system applications, and have been widely used in spaceborne radiometers, imaging receivers, and frequency extenders in vector networks. Applications. With the high frequency and arraying of various applications, there is also a higher demand for frequency multiplier sources above 500GHz. Since the 1980s, people have gradually improved the design theory of frequency multipliers based on Schottky diodes. The design is favored and also shows excellent performance. Among them, the balanced frequency multiplier circuit loaded with DC bias voltage can adjust the impedance of the varactor diode, and has higher impedance matching...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03B19/16
CPCH03B19/16
Inventor 田遥岭蒋均何月黄昆刘戈杨昊
Owner INST OF ELECTRONICS ENG CHINA ACAD OF ENG PHYSICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products