Integrated film with wave absorbing and shielding functions and preparation method thereof

A technology of integrated film and function, which is applied in the field of communication, can solve the problems of difficult processing, can not be made thin, thick film thickness, etc., and achieve the effect of overcoming processing difficulty, overcoming ultra-thin, and improving shielding bandwidth

Pending Publication Date: 2022-07-29
广州宏庆电子有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The existing broadband shielding is usually achieved by the following means: ① absorbing material + copper foil structure; Thin; and the integrated film is not resistant to bending, has poor flexibility and is easy to break; the film is difficult to process and high in cost
The invention proposes an integrated film with wave-absorbing and shielding functions and its preparation method. The method of the invention integrates wave-absorbing materials and metal materials, has wave-absorbing and shielding functions, and realizes electromagnetic wave shielding compatibility in a wide frequency band; The integration of wave-absorbing materials and metal materials perfectly realizes broadband shielding, and overcomes the shortcomings of traditional methods that cannot be ultra-thin, difficult to process, and high in cost

Method used

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  • Integrated film with wave absorbing and shielding functions and preparation method thereof
  • Integrated film with wave absorbing and shielding functions and preparation method thereof
  • Integrated film with wave absorbing and shielding functions and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0115] The preparation method of embodiment 1 integrated film

[0116] 1. Pretreatment of the carrier film layer

[0117] Corona pretreatment is performed on one side surface of a PET polyester film (PET) with a thickness of 25 μm and a width of 600 mm. Dyne value ≥ 32 dyne, preferably 35-60 dyne), to obtain the bearing film layer 1;

[0118] The pretreatment method of the surface of the carrier film layer can also be plasma treatment, embossing treatment, grinding, laser or UV treatment. The carrier film is pretreated to increase adhesion to the film surface. The voltage of 5000-20000V during corona treatment is suitable for the present invention.

[0119] The carrier film layer of the present invention may also be a polymer film such as PEN, PP, PI, etc. The carrier film layer with a thickness of 12-150 μm is suitable for the present invention.

[0120] 2. Preparation of absorbing material layer

[0121] 2-1. Preparation of absorbing paint:

[0122] Mix the raw materia...

Embodiment 1A

[0157] The preparation method of embodiment 1A integrated film

[0158] 1. Pretreatment of the carrier film layer

[0159] Same as Example 1.

[0160] 2. Preparation of absorbing material layer

[0161] Same as Example 1.

[0162] 3, superimposed metal layer

[0163] 3-1) Superimpose the base metal film layer

[0164] Except that the nickel target is selected for magnetron sputtering, the superimposed base metal film layer 3 is a metal nickel layer, and the thickness is 0.15 μm (usually 0.01-1 μm, preferably 0.1-0.3 μm) and step 3- 1) the same;

[0165] 3-2) Superimpose and thicken the metal film layer

[0166] A metal nickel film with a thickness of 6 μm (usually 1-30 μm, preferably 3-6 μm) is plated on the surface of the base metal nickel film by the method of alkaline electroplating, that is, the thickened metal film 4 (such as figure 1 ); Wherein alkaline electroplating prepares the technological condition of thick metal nickel layer as follows: pH value of electrop...

Embodiment 2

[0170] The preparation method of embodiment 2 integrated film

[0171] Except that the thickness of the absorbing material layer in step 2-4 is 30 μm, the rest is the same as that in Example 1.

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Abstract

The invention discloses an integrated film with wave-absorbing and shielding functions and a preparation method thereof, and belongs to the field of electronic materials, the integrated film comprises a bearing film layer and a wave-absorbing and shielding layer which are connected in sequence, and the wave-absorbing and shielding layer comprises a wave-absorbing material layer and a metal film layer. The wave-absorbing material and the metal material are organically integrated, so that a wide-frequency-band shielding function is achieved, and the problem of shielding low-frequency-band and high-frequency-band electromagnetic waves is effectively solved. The preparation method disclosed by the invention is simple to operate, and the formed integrated film is wide in applicable shielding bandwidth range, better in flexibility, more convenient to use, applicable to products such as film manufacturing, photoelectric display and FPC (Flexible Printed Circuit), and applicable to the field of communication.

Description

technical field [0001] The invention relates to an integrated film with a wave-absorbing and shielding function and a preparation method thereof, in particular to an integrated film with a wide-band shielding function (30KHZ-30GHZ) for communication, optoelectronic display, PCB, FPC (flexible circuit board), etc. A laminated film and a preparation method thereof belong to the technical field of communication. Background technique [0002] The research on the composite use of materials with special properties has a long history. How to organically combine materials of different materials, give full play to the functional properties of different materials, and develop towards the integration of materials has broad prospects. Most of these materials are monopolized by foreign countries, but ultra-thin and multi-functional thin films are essential for applications in high-end fields such as 5G applications and display communications. [0003] Communication terminals, especial...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q17/00H05K9/00C23C28/02
CPCH01Q17/004H05K9/0081C23C28/02
Inventor 郑永德郑凯晨
Owner 广州宏庆电子有限公司
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