Wafer-level system packaging structure and method

A system packaging and wafer-level technology, applied in the direction of microstructure technology, microstructure devices, manufacturing microstructure devices, etc., can solve the problems of large package size, low packaging efficiency, and difficult process, so as to enhance mechanical strength and improve Packaging efficiency, the effect of simplifying the process flow

Inactive Publication Date: 2022-07-29
NINGBO SEMICON INT CORP
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to provide a wafer-level system packaging structure and method, which at least solve the technical problems of low integration, large packaging size, difficult manufacturing process and low packaging efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Wafer-level system packaging structure and method
  • Wafer-level system packaging structure and method
  • Wafer-level system packaging structure and method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] This embodiment 1 provides a wafer-level system packaging method, including the following steps:

[0031] S01: Provide a device wafer, the surface of the device wafer has a plurality of exposed first pads, the surface of the device wafer forms a first cavity, and at least part of the first pads are located in the first below the cavity;

[0032] S02: Provide a first chip, the surface of the first chip has a plurality of exposed second pads, the first chip is embedded in the first cavity and bonded to the device wafer, the the first pad is opposite to the second pad to form a gap;

[0033] S03: A first conductive bump is formed in the gap by an electroplating process, and the first bonding pad and the second bonding pad are electrically connected through the first conductive bump.

[0034] It should be noted that the SON in this specification does not represent the order of the manufacturing processes.

[0035] Figure 1 to Figure 5 A schematic diagram of the structu...

Embodiment 2

[0078] refer to Figure 9 , which is different from Embodiment 1: the backside of the device wafer 10 further includes a third pad 12 , and the third pad 12 is located on the interconnect structure in the device wafer 10 and on the surface of the second chip 80 . The formed fourth pads 81 are electrically connected, the third pads 12 and the fourth pads 81 are arranged opposite to each other, and are formed between the third pads 12 and the fourth pads 81 during the electroplating process The second conductive bumps 90 . In other embodiments, before or after the first conductive bumps 11 are formed, the third pads 12 and the fourth pads 81 may be connected by conductive materials such as solder balls and conductive pillars.

[0079] The exposed area of ​​the third pad 12 or the fourth pad 81 is 5-200 square microns. Within this range, the pad can be in sufficient contact with the electroplating solution to avoid the influence of insufficient contact between the pad and the el...

Embodiment 3

[0081] refer to Figure 10 , the difference from Embodiment 1 is that a third chip 60 is bonded on the first chip 30 , and the third chip 60 is electrically connected to the first chip 30 . Specifically, the first chip 30 includes a fifth pad 32 on the second surface, and the fifth pad 32 is electrically connected to the first chip. The connection can also be achieved by plugs, which is not limited here. A sixth pad 61 is formed on the surface of the third chip 60, and the fifth pad 32 and the sixth pad 61 are arranged opposite to each other. In the electroplating process, a third conductive bump 70 is formed between the fifth bonding pad 32 and the sixth bonding pad 61; the third chip 60 and the first chip 30 can also be electrically connected through an electroless plating process, for example, refer to Figure 11 , the third chip 60 and the first chip 30 can also be electrically connected through the conductive blocks 71 formed by the ball mounting process. At this time, t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
areaaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a wafer-level system packaging structure and method, and the method comprises the steps: providing a device wafer, enabling the surface of the device wafer to be provided with a plurality of exposed first welding pads, enabling the surface of the device wafer to form a first cavity, and enabling at least part of the first welding pads to be located below the first cavity; a first chip is provided, the surface of the first chip is provided with a plurality of exposed second welding pads, the first chip is embedded into the first cavity and is in bonding connection with the device wafer, and the first welding pads and the second welding pads are opposite to each other to define a gap; and forming a first conductive bump in the gap through an electroplating process, wherein the first welding pad is electrically connected with the second welding pad through the first conductive bump. According to the invention, the first cavity is formed on the device wafer, and the first chip is embedded into the first cavity through the bonding technology, so that the connection between the first chip and the device wafer is realized, the integration height of the device is reduced, the space utilization rate is improved, and the integration level of the device is improved.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a wafer-level system packaging structure and method. Background technique [0002] With the advent of the era of 5G communication and artificial intelligence (AI), the amount of data to be transmitted and processed by high-speed interactive processing of chips used in such related fields is very large, and the demand for mobile Internet and Internet of Things is getting stronger and stronger. Electronic terminal products The miniaturization and multi-functionalization of products have become the general trend of industrial development. How to integrate and package different types of high-density chips together to form a system or subsystem with powerful functions and relatively low volume power consumption has become a major challenge in the field of advanced semiconductor chip packaging. [0003] At present, the multi-chip integrated packaging for such high-density ch...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/60H01L21/52H01L23/488B81B7/00B81B7/02B81C1/00
CPCH01L24/82H01L24/81H01L21/52H01L24/16B81C1/00095B81C1/00261B81B7/0006B81B7/0032B81B7/02H01L2224/16148
Inventor 黄河向阳辉刘孟彬
Owner NINGBO SEMICON INT CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap