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Refresh circuit and memory

A circuit and signal technology, applied in the field of refresh circuits and memory, can solve problems such as wasted current, and achieve the effect of reducing refresh current, waste, and waste of refresh current

Pending Publication Date: 2022-07-29
CHANGXIN MEMORY TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, at normal temperature or low temperature, all row addresses will be refreshed in advance within the corresponding longer data retention time, but the refresh command will be sent at a fixed time interval. At this time, the refresh will start from row 0 again, but in During the data hold time, this part is redundant refresh, wasting current

Method used

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Embodiment Construction

[0026] In order to make the objectives, technical solutions and advantages of the embodiments of the present invention clearer, each embodiment of the present invention will be described in detail below with reference to the accompanying drawings. However, those of ordinary skill in the art can appreciate that, in various embodiments of the present invention, many technical details are provided for the reader to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical solutions claimed in the present application can be realized.

[0027] refer to figure 1 , the refresh circuit includes: a refresh control module 20 for receiving a refresh command 11 to output a row address refresh signal 12, each time receiving a refresh command 11, outputting a row address refresh signal 12 of a preset number of times; and for receiving a temperature signal 10a, to adjust th...

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Abstract

The embodiment of the invention provides a refresh circuit and a memory, and the refresh circuit comprises a refresh control module which is used for receiving refresh commands so as to output row address refresh signals, and outputting the row address refresh signals with a preset number of times when each refresh command is received; the processor is also used for receiving a temperature signal so as to adjust the preset value, and the higher the temperature represented by the temperature signal is, the larger the adjusted preset value is; the row addressing device is used for receiving the row address refreshing signal and outputting a single row address to be refreshed; and the array refreshing device is used for carrying out single-row refreshing operation according to the single-row address and outputting a single-row refreshing ending signal after the single-row refreshing is ended. The embodiment of the invention is favorable for reducing the consumption of the refresh current.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductors, and in particular, to a refresh circuit and a memory. Background technique [0002] In order to save the data in the volatile memory, the volatile memory needs to be refreshed periodically, and the refresh operation needs to complete the refresh of all rows within the data retention time. The data retention time of volatile memory is related to the chip temperature. At high temperature, the data retention time is shorter, and at low temperature, the data retention time is longer. [0003] The traditional technology will meet the medium and high temperature as the standard. According to the data retention time in the medium and high temperature environment, refresh commands at corresponding time intervals are sent, and a fixed number of rows are refreshed under each refresh command. Therefore, under normal temperature or low temperature, all row addresses will be refreshed in a...

Claims

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Application Information

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IPC IPC(8): G11C11/406G11C11/408
CPCG11C11/40626G11C11/408G11C11/406
Inventor 谷银川刘格言
Owner CHANGXIN MEMORY TECH INC
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