Semiconductor device with low pinch-off voltage

Abstract

Disclosed is a semiconductor device having a low pinch-off voltage. The semiconductor device includes a junction field effect transistor. The junction field effect transistor comprises a semiconductor substrate, a first well region formed in the semiconductor substrate, a first edge gate, a second edge gate, a source electrode and a drain electrode. Wherein the first edge gate and the second edge gate are formed in the first well region, the depth of the first edge gate, the depth of the second edge gate and the depth of the first well region are the same, and the source electrode and the drain electrode are formed in the first well region.

Description

technical field [0001] The present invention relates to a semiconductor device, in particular to a junction field effect transistor with low pinch-off voltage and a manufacturing method thereof. Background technique [0002] Junction field effect transistors are widely used in start-up circuits or constant current source circuits because they can withstand a certain high voltage and have a fixed pinch-off voltage. In some low-power constant current source circuits, the pinch-off voltage of the junction field effect transistor is required to be reduced to about 1.2V. At present, the pinch-off voltage is usually reduced by changing the doping concentration of the gate or well region of the junction field effect transistor, which requires additional masks and process steps, and increases the manufacturing cost of the junction field effect transistor. [0003] Therefore, there is a need for a junction field effect transistor that can reduce the pinch-off voltage without increas...

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Problems solved by technology

At present, the pinch-off voltage is usually reduced by changing the doping concentration of the junction field effect transistor gate or well region, which requires additional masks and process steps, which increases the manufacturing cost of the junction field effect transistor

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