Epitaxial tray for improving quality of epitaxial wafer and use method thereof

Abstract

The invention discloses an epitaxial tray for improving the quality of an epitaxial wafer, and belongs to the technical field of epitaxial growth. The epitaxial tray is a cylinder, the first surface of the epitaxial tray is provided with a plurality of concentric substrate placing rings, and each substrate placing ring comprises a plurality of circular grooves which are uniformly distributed along the circumferential direction of the epitaxial tray. The depth of each circular groove is 1000-1500 micrometers, and a substrate supporting columnar protrusion with the diameter smaller than that of the circular groove is arranged in each circular groove. And the temperature difference of the substrate is reduced, so that warping and sinking of the substrate are reduced, and the temperature uniformity of the substrate is improved, so that the uniformity of an epitaxial wafer growing on the substrate is improved. The space between the circular groove and the substrate supporting columnar protrusion accommodates attachments, so that the possibility that the attachments are attached to the substrate supporting columnar protrusion to affect the substrate and the epitaxial wafer is reduced, and the quality of the epitaxial wafer is improved.

Description

technical field [0001] The present disclosure relates to the technical field of epitaxial growth, and in particular, to an epitaxial tray for improving the quality of an epitaxial wafer and a method for using the same. Background technique [0002] The epitaxial tray is a part of a metal-organic chemical vapor deposition (English: Metal-organic Chemical Vapor Deposition, MOCVD for short) equipment, and the epitaxial tray is usually located in a reaction chamber of the MOCVD equipment. The epitaxial tray is usually a cylinder, and an end face of one end of the epitaxial tray is provided with a plurality of concentric substrate placement rings, each of which includes a plurality of circular grooves uniformly distributed along the circumference of the epitaxial tray. The end face of the other end of the epitaxial tray is connected with the driving structure of the MOCVD equipment. [0003] When preparing an epitaxial wafer, the substrates need to be placed in each circular gro...

AI Technical Summary

Problems solved by technology

During the epitaxial growth process, the round edge of the substrate will be in contact with the edge in the front groove of the epitaxial tray, so that the temperature of the round edge of the substrate is high, and the temperature of the center of the substrate is low. Inhomogeneous; and the substrate itself has a certain thermal expansion, the high temperature at the edge of the substrate and the low temperature at the center of gravity will cause the expansion of the edge of the substrate to be greater than the expansion of the center of the substrate, resulting in a certain depression in the substrate during the epitaxial growth process

During the epitaxial growth process, the substrate becomes concave, that is, the edge of the substrate is lifted, which will also expose the edge area in the circular groove of the epitaxial tray, which is easy to adhere to the by-products of the epitaxial reaction, which will affect the placement and epitaxy of the next substrate. slice growth

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