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Method for reducing transparency and resistivity of lithium niobate or lithium tantalate wafer

A technology of lithium tantalate and lithium niobate, which is applied in the field of reducing the transparency and resistivity of lithium niobate or lithium tantalate wafer, can solve the problem of difficulty in controlling the blackening speed of the wafer, the reduction degree of the wafer, the easily broken reducing metal or compound powder, The problem of uneven reduction degree of wafers can reduce the uniformity of light transmittance, reduce the blackening treatment time, and improve the reduction efficiency and uniformity.

Inactive Publication Date: 2022-07-12
苏州南智芯材科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] In order to solve the problem in the prior art, the reduction and blackening treatment of lithium niobate or lithium tantalate wafers by using strong reducing elemental substances or compound powders leads to complete blackening of the wafers, and it is difficult to control the speed of wafer blackening and the degree of wafer reduction, resulting in mechanical The strength is reduced, the wafer is easily broken due to the low strength during the film peeling process, and the reducing metal or compound powder is difficult to fully contact the wafer surface, and the degree of wafer reduction is uneven. At the same time, the wafer resistivity and light transmittance are reduced. To improve wafer performance, improve wafer quality and reduce production costs. The invention discloses a method for reducing the transparency and resistivity of lithium niobate or lithium tantalate wafers. The specific steps include:

Method used

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  • Method for reducing transparency and resistivity of lithium niobate or lithium tantalate wafer
  • Method for reducing transparency and resistivity of lithium niobate or lithium tantalate wafer
  • Method for reducing transparency and resistivity of lithium niobate or lithium tantalate wafer

Examples

Experimental program
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Effect test

Embodiment 1

[0041] The lithium niobate wafer (the lithium niobate wafer has been ultrasonically cleaned, and its surface moisture has been blown dry) and the pure cotton paper are alternately arranged to form a two-layer laminated structure, the laminated structure is placed in a vacuum annealing furnace, the vacuum pump is turned on, and the adjustment The vacuum pressure was 0.1kPa, then the gas valve was opened, nitrogen gas was introduced (the nitrogen flow rate was 0.1L / min), the temperature of the annealing furnace was adjusted to 300 °C, and the temperature of the annealing furnace was kept constant for 3 hours, and then the temperature of the vacuum annealing furnace was lowered to 25 °C, and the gas was turned off in turn. Valves and vacuum pumps continue to blacken the lithium niobate wafers until the vacuum annealing furnace is opened, and the lithium niobate wafers are taken out to complete the blackening treatment. The blackened lithium niobate wafers are yellow and black.

[...

Embodiment 2

[0047] The lithium tantalate wafer (the lithium tantalate wafer has been ultrasonically cleaned, and its surface moisture has been blown dry) and the fiber cloth are alternately arranged to form an eight-layer laminated structure. The laminated structure is placed in a vacuum annealing furnace, the vacuum pump is turned on, and the vacuum pressure is adjusted Then open the gas valve, introduce nitrogen (the nitrogen flow rate is 0.3L / min), adjust the temperature of the annealing furnace to 400 ° C, and treat it at a constant temperature for 5 hours, then reduce the temperature of the vacuum annealing furnace to 25 ° C, close the gas valve and vacuum pump in turn. , continue to blacken the lithium tantalate wafer until the vacuum annealing furnace is opened, take out the lithium tantalate wafer to complete the blackening treatment, and the blackened lithium tantalate wafer is a black piece.

[0048] The lithium tantalate wafer has a thickness of 0.35mm and a diameter of 100mm; ...

Embodiment 3

[0053] The lithium niobate wafer (the lithium niobate wafer has been ultrasonically cleaned, and its surface moisture has been blown dry) and the pure cotton paper are alternately arranged to form a three-layer laminated structure, the laminated structure is placed in a vacuum annealing furnace, the vacuum pump is turned on, and the vacuum is adjusted The pressure is 0.5kPa, then the gas valve is opened, and nitrogen gas is introduced (the nitrogen flow rate is 0.5L / min), the temperature of the annealing furnace is adjusted to 350 °C, and the temperature of the annealing furnace is kept constant for 4 hours, and then the temperature of the vacuum annealing furnace is lowered to 25 °C, and the gas valve is closed in turn. , vacuum pump, continue to blacken the lithium niobate wafer until the vacuum annealing furnace is opened, take out the lithium niobate wafer to complete the blackening treatment, and the blackened lithium niobate wafer is a gray flake.

[0054] The lithium nio...

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Abstract

The invention discloses a method for reducing transparency and resistivity of a lithium niobate or lithium tantalate wafer, which comprises the following steps of: alternately arranging the pretreated lithium niobate or lithium tantalate wafer and pure cotton paper or fiber cloth to form a laminated structure, and performing reduction blackening treatment on the wafer under a specific annealing furnace process condition to obtain the lithium niobate or lithium tantalate wafer. By adjusting the ratio of the thickness of the pure cotton paper or the fiber cloth to the thickness of the wafer, the lithium niobate or lithium tantalate yellow black wafer / grey wafer with different reduction degrees can be controllably prepared, the problems that the wafer blackening speed is too high, the reduction degree of the wafer is difficult to control, and the wafer is completely blackened are effectively solved, meanwhile, the resistivity and the light penetration rate of the wafer are effectively reduced, and the service life of the wafer is prolonged. And the whole process preparation process is environment-friendly and pollution-free, the reduction blackening treatment process is simple, the energy consumption is low, the production efficiency is low, and the method has excellent actual production value.

Description

technical field [0001] The present application relates to the technical field of crystal materials, in particular to a method for reducing the transparency and resistivity of lithium niobate or lithium tantalate wafers. Background technique [0002] Lithium niobate (LiNbO 3 , LN) lithium tantalate (LiTaO 3 , LT) crystal has excellent mechanical properties, is easy to grow large-size single crystal, easy to process, and has excellent physical properties such as electro-optic, birefringence, piezoelectric, pyroelectric and photovoltaic effects, and is widely used in filters, frequency doubling conversion. , holographic storage and other fields, at present, lithium niobate and lithium tantalate crystals have become the main raw materials for the manufacture of high-frequency / ultra-high-frequency SAW filters. [0003] Lithium niobate and lithium tantalate crystals have obvious pyroelectric properties, and the untreated LN and LT crystals have high resistivity. In the SAW filte...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/02C30B29/30
CPCC30B33/02C30B29/30Y02P70/50
Inventor 吴剑波吴冰张虞倪荣萍李胜雨
Owner 苏州南智芯材科技有限公司
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