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Quantum dot light emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, applied in the field of quantum dots, can solve the problems of low light-emitting efficiency of quantum dot light-emitting diodes, and achieve the effects of reducing material and device degradation, reducing injection barriers, and blocking electron tunneling

Pending Publication Date: 2022-07-01
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem of low luminous efficiency due to the existing quantum dot light-emitting diodes

Method used

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  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof
  • Quantum dot light emitting diode and preparation method thereof

Examples

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Effect test

Embodiment 1

[0061]A preparation method of a quantum dot light-emitting diode with a positive bottom emission structure, comprising the following steps:

[0062] Step S1: on the transparent anode substrate, deposit a hole injection layer, the transparent anode is ITO, and the hole injection layer material is WO 3 , the thickness of the transparent anode is 20nm, and the thickness of the hole injection layer is 60nm;

[0063] Step S2: depositing a hole transport layer on the hole injection layer, the material of the hole transport layer is PFB, and the thickness of the hole transport layer is 60 nm;

[0064] Step S3: depositing an interface layer on the hole transport layer, the interface layer material is Li 9 OS 5 Br, the thickness of the interface layer is 100nm;

[0065] Step S4: depositing a quantum dot light-emitting layer on the interface layer, the material of the quantum dot light-emitting layer is PbSe, and the thickness of the quantum dot light-emitting layer is 50 nm;

[006...

Embodiment 2

[0069] A preparation method of a quantum dot light-emitting diode with a positive top emission structure, comprising the following steps:

[0070] Step S1: on the transparent anode substrate, deposit a hole injection layer, the transparent anode is FTO, and the hole injection layer material is WO 3 , the thickness of the transparent anode is 20nm, and the thickness of the hole injection layer is 60nm;

[0071] Step S2: depositing a hole transport layer on the hole injection layer, the material of the hole transport layer is TCTA, and the thickness of the hole transport layer is 60 nm;

[0072] Step S3: depositing an interface layer on the hole transport layer, the interface layer material is Li 9 OS 5 Br, the thickness of the interface layer is 100nm;

[0073] Step S4: depositing a quantum dot light-emitting layer on the interface layer, the material of the quantum dot light-emitting layer is InP, and the thickness of the quantum dot light-emitting layer is 50 nm;

[0074]...

Embodiment 3

[0077] A preparation method of a quantum dot light-emitting diode with an inverted bottom emission structure, comprising the following steps:

[0078] Step S1: depositing an Ag layer on the substrate by means of evaporation, and the thickness of the Ag layer is 5 nm;

[0079] Step S2: depositing an electron transport layer on the Ag layer, the material of the electron transport layer is SnO, and the thickness of the electron transport layer is 50 nm;

[0080] Step S3: depositing a quantum dot light-emitting layer on the electron transport layer, the material of the quantum dot light-emitting layer is CdSe, and the thickness of the quantum dot light-emitting layer is 50 nm;

[0081] Step S4: depositing an interface layer on the quantum dot light-emitting layer, the material of the interface layer is Li 9 OS 5 Br, the thickness of the interface layer is 80nm;

[0082] Step S5: depositing a hole transport layer on the interface layer, the material of the hole transport layer i...

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Abstract

The invention discloses a quantum dot light-emitting diode and a preparation method thereof, the quantum dot light-emitting diode comprises a quantum dot light-emitting layer arranged between a cathode and an anode and a hole transport layer arranged between the anode and the quantum dot light-emitting layer, an interface layer is arranged between the hole transport layer and the quantum dot light-emitting layer, and the hole transport layer is arranged between the interface layer and the quantum dot light-emitting layer. The material of the interface layer is argyrodite, the structural general formula of the argyrodite is Li9OS5X, and X is one of F, Cl, Br or I; the HOMO energy level of the interface layer is larger than the HOMO energy level of the hole transport layer and smaller than the HOMO energy level of the quantum dot light-emitting layer. According to the invention, the interface layer can effectively reduce the hole injection barrier, improve the hole injection rate, and effectively prevent tunneling of electrons and recombination of holes in a non-quantum dot light-emitting region, thereby improving the light-emitting efficiency of the device.

Description

technical field [0001] The invention relates to the field of quantum dots, in particular to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diodes (QLEDs) have good characteristics such as high color purity, narrow half-maximum width, high luminous efficiency, tunable luminescence color, and device stability, which make them have broad application prospects in flat-panel displays, solid-state lighting and other fields. With the continuous advancement of research and development, the external quantum efficiency (EQE) of quantum dot LEDs has been significantly improved. Among them, the external quantum efficiencies of red quantum dot LEDs and green quantum dot LEDs are both higher than 25%. It is comparable to organic light emitting diodes (OLEDs), but the external quantum efficiency and lifetime of blue quantum dot light emitting diodes are still insufficient to meet the requirements. [0003] Simi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/54H01L51/56
CPCH10K30/865H10K50/11H10K2101/40H10K50/115H10K50/15H10K2102/00H10K71/00
Inventor 严怡然
Owner TCL CORPORATION
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