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Crucible device for preparing aluminum nitride prefabricated material

A technology of prefabricated materials and aluminum nitride, which is applied in the growth of polycrystalline materials, chemical instruments and methods, and single crystal growth. It can solve the problems of different physical and chemical properties such as crystallization degree and purity, and inconsistent temperature field distribution. Stable and unified source of raw materials, simple structure and low cost

Pending Publication Date: 2022-06-24
QILU UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the problem of different physical and chemical properties such as density, crystallization degree and purity in different regions of the preform due to inconsistent temperature field distribution in the prior art during the firing process of the aluminum nitride preform, the present invention provides a The crucible device used to prepare aluminum nitride preforms, by setting the crucible components in the crucible chamber, can effectively adjust the temperature field distribution inside the crucible, and prepare aluminum nitride preforms with more uniform physical and chemical properties

Method used

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  • Crucible device for preparing aluminum nitride prefabricated material
  • Crucible device for preparing aluminum nitride prefabricated material
  • Crucible device for preparing aluminum nitride prefabricated material

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] The crucible device I used for preparing the aluminum nitride preform in Example 1 is as follows: figure 1 and figure 2 shown, where figure 1 A schematic diagram of the overall cross-sectional structure of the crucible device I for preparing aluminum nitride preforms, figure 2 A schematic diagram of the split cross-sectional structure of the crucible device I for preparing aluminum nitride preforms.

[0026] The described crucible device I for preparing aluminum nitride preforms is made of tungsten material, and consists of a crucible 1 and a crucible assembly 2, and the crucible assembly 2 is a detachable structure; wherein, the crucible 1 is a hollow cylinder with a bottom, It consists of a crucible body 11 and a crucible cover 12;

[0027] The crucible body 11 is engaged with the crucible cover 12, the upper mouth wall of the crucible body 11 has a groove structure 110, and the crucible cover 12 has a convex structure 120 matching the groove structure 110, provi...

Embodiment 2

[0030] The crucible device II used for preparing the aluminum nitride preform in Example 2 is as follows: image 3 and Figure 4 shown, where image 3 A schematic diagram of the overall cross-sectional structure of the crucible device II for preparing aluminum nitride preforms, Figure 4 Schematic diagram of split section structure of crucible device II for preparing aluminum nitride preform

[0031] The described crucible device II for preparing aluminum nitride preforms is made of tantalum carbide, and consists of a crucible 1 and a crucible assembly 2. The crucible assembly 2 is a detachable structure; wherein, the crucible 1 is a hollow cylinder with a bottom, consisting of a crucible 1 and a crucible assembly 2. The crucible body 11 and the crucible cover 12 are composed;

[0032] The crucible body 11 is engaged with the crucible cover 12, the upper mouth wall of the crucible body 11 has a groove structure 110, and the crucible cover 12 has a convex structure 120 match...

Embodiment 3

[0035] The described crucible device III for preparing aluminum nitride preform is made of tantalum carbide, and consists of a crucible 1 and a crucible assembly 2, and the crucible assembly 2 is a detachable structure; the structure of the crucible 1 is the same as that of the embodiment 1;

[0036]The crucible assembly 2 is cylindrical, the upper and lower ends are thick, and the middle is thin. , consisting of the thinnest area 22 and the middle area 23, distributed symmetrically up and down; feature point 1 201, feature point 2 202 and feature point 3 203 coincide, feature point 4 204, feature point 5 205 and feature point 6 206 coincide, and the two coincide The point is the thickest area 21, the center is the thinnest area 22, feature point 1 201 (feature point 2 202, feature point 3 203), feature point 4 204 (feature point 5 205, feature point 6 206) and the center The area between the points is the middle area 23, the thickest area 21 of the crucible assembly 2 is loca...

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Abstract

The invention discloses a crucible device for preparing an aluminum nitride prefabricated material, the device is composed of a crucible and a crucible assembly, the crucible is composed of a crucible body and a crucible cover, and the crucible assembly is fixed on the inner side surface of the crucible body; the crucible assembly is of a hollow structure with two open ends, the upper end and the lower end are thick, and the middle is thin. The crucible assembly of the temperature field unifying device is arranged on the inner wall of the crucible, and a more stable and consistent temperature field can be provided in the process of preparing the prefabricated material source for growth of aluminum nitride, so that density and crystallization degree can be obtained in the process of preparing the prefabricated material source for growth of aluminum nitride; the prefabricated material sources with more uniform physical and chemical properties such as different purity can be prepared, the stable and uniform raw material sources can be provided in the crystal growth process, the crystals with higher quality can be obtained, the structure is simple, the repeated use can be realized, and the cost is low.

Description

technical field [0001] The invention relates to a crucible device, in particular to a crucible device for preparing aluminum nitride preforms. Background technique [0002] As a crystal material widely used in the fields of electronics and optoelectronics, aluminum nitride crystal materials are widely used in the field of deep ultraviolet optoelectronics because of their high thermal conductivity, high resistivity, high breakdown voltage, and high chemical stability. High-frequency, high-voltage, high-power electronics and high-temperature electronics. [0003] At present, the physical vapor transport method has been recognized by scientists from all over the world as the most suitable method for growing large-sized aluminum nitride crystal materials. The principle is to heat the crucible device by induction heating. In the high temperature region, the aluminum nitride preform is continuously sublimated at high temperature, and the sublimated material reaches the low temper...

Claims

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Application Information

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IPC IPC(8): C30B23/00C30B29/40
CPCC30B29/40C30B23/00
Inventor 郝霄鹏要笑刚邵永亮吴拥中杨铭志
Owner QILU UNIV OF TECH
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