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Near-infrared light-emitting tin-bismuth-doped aluminosilicate glass optical rod and preparation method thereof

An aluminosilicate glass, near-infrared technology, used in glass manufacturing equipment, glass pressing, glass molding and other directions, can solve the problem of low near-infrared luminous efficiency, complex glass sample preparation process, unclear near-infrared luminescence mechanism, etc. problem, to achieve the effect of good luminous efficiency and simple preparation method

Pending Publication Date: 2022-06-24
四川和泰光纤有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, there are still many problems in the research of Bi-doped materials, such as the low near-infrared luminescence efficiency of Bi in glass, the unclear near-infrared luminescence mechanism of Bi-doped glass, and the complicated preparation process of glass samples.

Method used

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  • Near-infrared light-emitting tin-bismuth-doped aluminosilicate glass optical rod and preparation method thereof
  • Near-infrared light-emitting tin-bismuth-doped aluminosilicate glass optical rod and preparation method thereof
  • Near-infrared light-emitting tin-bismuth-doped aluminosilicate glass optical rod and preparation method thereof

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Experimental program
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Embodiment 1

[0030] see Figure 1-4 , the present invention provides the following technical solutions: a near-infrared light-emitting tin-bismuth-doped aluminosilicate glass light rod, the molar percentage components of each component are:

[0031]

[0032]

[0033] A preparation method of near-infrared light-emitting tin-bismuth-doped aluminosilicate glass light rod, comprising the following steps:

[0034] S1: Calculate the required amount of each raw material according to the above molar ratio;

[0035] S2: Weigh the raw materials on a high-precision electronic balance;

[0036] S3: Pour each raw material into an agate mortar and grind for 15min in turn, until the mixture is uniform to obtain mixed powder;

[0037] S4: Pour the mixed powder into a high-purity alumina crucible, put the high-purity alumina crucible containing the sample into a high-temperature furnace, and melt at 1600° C. for 90 minutes to obtain a molten glass liquid;

[0038] S5: After the heat preservation, ...

Embodiment 2

[0043] The difference between this embodiment and Embodiment 1 is:

[0044] see Figure 1-4 , the present invention provides the following technical solutions: a near-infrared light-emitting tin-bismuth-doped aluminosilicate glass light rod, the molar percentage components of each component are:

[0045]

[0046] A preparation method of near-infrared light-emitting tin-bismuth-doped aluminosilicate glass light rod, comprising the following steps:

[0047] S1: Calculate the required amount of each raw material according to the above molar ratio;

[0048] S2: Weigh the raw materials on a high-precision electronic balance;

[0049] S3: Pour each raw material into an agate mortar and grind for 15min in turn, until the mixture is uniform to obtain mixed powder;

[0050] S4: Pour the mixed powder into a high-purity alumina crucible, put the high-purity alumina crucible containing the sample into a high-temperature furnace, and melt at 1600° C. for 90 minutes to obtain a molten...

Embodiment 3

[0056] The difference between this embodiment and Embodiment 1 is:

[0057] see Figure 1-4 , the present invention provides the following technical solutions: a near-infrared light-emitting tin-bismuth-doped aluminosilicate glass light rod, the molar percentage components of each component are:

[0058]

[0059]A preparation method of near-infrared light-emitting tin-bismuth-doped aluminosilicate glass light rod, comprising the following steps:

[0060] S1: Calculate the required amount of each raw material according to the above molar ratio;

[0061] S2: Weigh the raw materials on a high-precision electronic balance;

[0062] S3: Pour each raw material into an agate mortar and grind for 15min in turn, until the mixture is uniform to obtain mixed powder;

[0063] S4: Pour the mixed powder into a high-purity alumina crucible, put the high-purity alumina crucible containing the sample into a high-temperature furnace, and melt at 1600° C. for 90 minutes to obtain a molten ...

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Abstract

The invention discloses a near-infrared luminescent tin-bismuth doped aluminosilicate glass optical rod, which belongs to the technical field of glass optical rod preparation, and comprises the following components in mole percentage: 39-64% of SiO2, 10-30% of Al2O3, 25-30% of CaCO3, 0.1-2% of Bi2O3 and 0.2-1% of SnO2. The invention further discloses a preparation method of the near-infrared light-emitting tin-bismuth-doped aluminosilicate glass optical wand. By adding calcium carbonate, the preparation temperature is reduced, so that the preparation method has obvious advantages; by reasonably adjusting the formula of the matrix, co-doping bismuth, aluminum and tin ions and adjusting the concentration of doped ions, the ultra-wideband luminescent material which is simpler in preparation method and good in luminous efficiency is obtained.

Description

technical field [0001] The invention belongs to the technical field of glass light rod preparation, in particular to a near-infrared luminescent tin-bismuth doped aluminosilicate glass light rod and a preparation method. Background technique [0002] With the rapid development of communication technology, information technology has been widely used in political, military, economic and other social aspects, which has had a wide and far-reaching impact on the development of society, especially the optical communication technology with optoelectronics or optoelectronics as the information carrier It has become the only way for future information development. [0003] As an emerging technology, optical fiber communication technology has become one of the main pillars of modern communication due to its rapid development. However, due to its own limitations, the optical fiber doped with traditional rare earth ions makes it difficult for its amplification bandwidth to exceed 100 nm...

Claims

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Application Information

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IPC IPC(8): C03C4/12C03C3/087C03B11/00C03B25/00
CPCC03C4/12C03C3/087C03B25/00C03B11/00
Inventor 向松张敏陈江张飞全何晨程
Owner 四川和泰光纤有限公司
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