Vertical transistor, display pixel, vertical light-emitting transistor and display panel

Abstract

The embodiment of the invention provides a vertical transistor, a display pixel, a vertical light-emitting transistor and a display panel, the vertical transistor comprises a source electrode layer, a first active layer, a grid electrode layer, a second active layer and a drain electrode layer which are sequentially stacked in the vertical direction, and the grid electrode layer comprises a first grid electrode structure and a second grid electrode structure, the first active layer and the second active layer form Schottky contact with the first gate structure; the first gate structure is located in the vertical stacking connection region, a first active overlapping region exists between the first gate structure and the source layer in the vertical direction, a second active overlapping region exists between the first gate structure and the gate layer in the vertical direction, and the first gate structure adopts a sparse gate material or has a sparse hollow structure; the first active overlapping region is a projection overlapping part of two connecting surfaces for connecting the first active layer with the source electrode layer and the grid electrode layer, and the second active overlapping region is a projection overlapping part of two connecting surfaces for connecting the second active layer with the drain electrode layer and the grid electrode layer; the second gate structure is located in the non-vertical stack connection region.

Description

Technical field [0001] The present disclosure relates to the field of display and control, in particular to a vertical transistor, display pixels, vertical light-emitting transistors and display panels. Background [0002] A gate-source-drain vertical distribution of gate-source-drain Vertical Field Effect Transistor (referred to as VOFET) structure, which is a flat plate capacitor unit superimposed active layer and drain electrode, which can reduce the distance between the source drain (active layer deposition thickness is the length of the channel), increase the area of the conductive channel between the source drain, Solve the problem of higher working voltage and small working current caused by excessive resistance of organic semiconductor transistors with airport effect. [0003] However, the depth of the channel is controlled by the gate, which can usually only stay a few nanometers, can not be more adjusted at the same voltage to the operating current, can not be further r...

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Problems solved by technology

[0004] In view of this, the embodiments of the present disclosure propose a vertical transistor, a display pixel, a vertical light-emitting transistor, and a display panel to solve the following problems in the prior art: the existing transistor cannot change the working current under the same voltage. Even with large adjustments, the operating voltage cannot be further reduced under the same operating current, and the performance of the device is lower

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