Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Third-generation semiconductor contact window structure and manufacturing method thereof

A manufacturing method and contact window technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, semiconductor/solid-state device components, etc., can solve problems such as lattice structure damage, high contact window resistance, impurity ion pollution, etc., to achieve improved Anti-acid corrosion, reduce contact resistance, and reduce the effect of process steps

Pending Publication Date: 2022-05-27
GALLIUM ADVANCE SEMICON TECH CO
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The main purpose of the present invention is to provide a third-generation semiconductor contact window structure and its manufacturing method, aiming to solve the lattice structure damage and impurity ion pollution on the surface of the compound epitaxial layer caused by the metal sputtering process of the third-generation semiconductor device, and Technical problem of high contact window resistance

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Third-generation semiconductor contact window structure and manufacturing method thereof
  • Third-generation semiconductor contact window structure and manufacturing method thereof
  • Third-generation semiconductor contact window structure and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0029] In order to facilitate the understanding of the present invention, the present invention will be described in more detail below with reference to the accompanying drawings and specific embodiments. It should be noted that when an element is referred to as being "fixed to" another element, it can be directly on the other element, or one or more intervening elements may be present therebetween. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or one or more intervening elements may be present therebetween. The terms "vertical", "horizontal", "left", "right", "inner", "outer" and similar expressions used in this specification are for illustrative purposes only. In the description of the present invention, the terms "first" and "second" are only used for descriptive purposes, and cannot be understood as indicating relative importance, or implicitly indicating the number of indicated technical features....

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
angleaaaaaaaaaa
Login to View More

Abstract

The invention relates to the technical field of semiconductor manufacturing, and discloses a third-generation semiconductor contact window structure and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a substrate, and depositing a compound epitaxial layer on the substrate; depositing a first metal layer on the compound epitaxial layer through a metal evaporation process; depositing an isolation layer on the compound epitaxial layer and the first metal layer; a through hole is correspondingly formed in the portion, located above the first metal layer, of the isolation layer and penetrates through the isolation layer, and the inner wall of the through hole is an inclined cambered surface; and depositing a second metal layer on the isolation layer and the through hole through a metal evaporation process. Damage and impurity ion pollution to a lattice structure on the surface of a compound epitaxial layer by a metal sputtering process are effectively prevented, and the contact impedance of a third-generation semiconductor contact window structure is reduced.

Description

technical field [0001] The present invention relates to the technical field of semiconductor manufacturing, in particular to a third-generation semiconductor contact window structure and a manufacturing method thereof. Background technique [0002] In the traditional compound semiconductor manufacturing industry, an insulating layer is usually deposited on the surface of the compound, and then holes are opened in a fixed area through photolithography and etching processes, and then metal is deposited in the through holes to form through-hole metal and metal wiring. There are the following drawbacks: 1. Performing the etching process directly on the surface of the compound will directly damage the crystal lattice on the surface of the compound; 2. When sputtering metal, metal atoms will sputter and bombard the surface of the compound, thereby damaging the surface of the compound. Lattice; 3. The metal material for sputtering is Al-Ni alloy, but Al-Ni alloy has high impedance...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/768H01L23/538
CPCH01L21/76897H01L23/5386Y02P70/50
Inventor 陈正培徐文凯柴佳欣
Owner GALLIUM ADVANCE SEMICON TECH CO
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com